UHF power amplifier design in 0.35μm SiGe BiCMOS

作     者：宋家友 Li Zhiqun Wang Zhigong 

作者机构：Institute of RF-＆ OE-ICs Southeast University Nanjing 210096 P.R. China School of Information Engineering Zhengzhou University Zhengzhou 450052 P.R. China 

基　　金：Supported by the High Technology Research and Development Programme of China (2006AA03Z418) 

出 版 物：《High Technology Letters》 (高技术通讯（英文版）)

年 卷 期：2009年第15卷第2期

页      码：147-150页

摘      要：A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz s 0.35μmSiGe BiCMOS *** was fully integrated excluding the inductors and the output matching *** a single 3.3V supply voltage,the off-chip bonding test results indicated that the circuit has a smallsignal gain of more than 24dB,the input and output reflectance are less than- 24dB and-10dB,re-spectively,and the maximal output power is 23.5 *** output power of 23.1 dBm,the PAE(poweradded efficiency)is 30.2%,the IMD2 and IMD3 are less than- 32 dBc and-46 dBc,*** chip size is 1.27mm ×0.9mm.

主 题 词：power amplifier SiGe BiCMOS heterojuncfion bipolar transistor 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 0710[理学-生物科学类] 0831[工学-公安技术类] 0810[工学-土木类] 1205[管理学-图书情报与档案管理类] 0807[工学-电子信息类] 0805[工学-能源动力学] 0802[工学-机械学] 0836[0836] 0811[工学-水利类] 0812[工学-测绘类] 0702[理学-物理学类] 

核心收录：

D　O　I：10.3772/j.issn.1006-6748.2009.02.007

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