Structure Design Considerations of a Sub-50nm Self-Aligned Double-Gate MOSFET

作     者：殷华湘 徐秋霞 Yin Huaxiang;Xu Qiuxia

作者机构：中国科学院微电子中心北京100029 

基　　金：国家自然科学基金 (批准号 :60 1760 10 ) 国家"973"资助项目 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2002年第23卷第12期

页      码：1267-1274页

摘      要：A comprehensive way to design a sub 50nm SADG MOSFET with the ability of being fabricated by improved CMOS technique is *** this way,the gate length and thickness of Si island of DG device show many different scaling limits for various ***,the spacer insulator shows a kind of width thickness on device drain current and circuit speed.A model about that effect is developed and offers design consideration for future.A new design of channel doping profile,called SCD,is also discussed here in *** DG device with SCD can achieve a good balance between the volume inversion operation mode and the control of V th .Finally,a guideline to make a SADG MOSFET is presented.

主 题 词：double gate MOSFET structure design sidewall effect SCD 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.3969/j.issn.1674-4926.2002.12.007

馆 藏 号：203321075...