Optimization design of GaN betavoltaic microbattery

作     者：TANG XiaoBin LIU YunPeng DING Ding CHEN Da 

作者机构：Department of Nuclear Science and EngineeringNanjing University of Aeronautics and AstronauticsNanjing 210016China 

基　　金：supported by the China Postdoctoral Science Foundation Funded Project (Grant No. 20100481140) the Nanjing University of Aeronautics and Astronautics Basic Research Funded Project (Grant No. Y1065-063) 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2012年第55卷第4期

页      码：659-664页

摘      要：Betavoltaic radioisotope microbatteries have gradually become the research direction of micro-power sources because of their several advantages,including small scale,stable output performance,long service life,high energy density,strong anti-jamming capability,and so *** on the theory of semiconductor physics,the current paper presented a design scheme of isotope microbattery with wide-gap semiconductor material GaN and isotope *** consideration of the isotope s self-absorption effect,the current paper studied and analyzed the optimization thickness of semiconductor and isotope source,junction depth,depletion region thickness,doping concentration,and the generation and collection of electron hole pairs with simulation of transport process of beta particles in semiconductor material using Monte Carlo simulation program *** the proposed design scheme,for a single decay,an average energy of 28.2 keV was deposited in the GaN,and the short circuit current density,open circuit voltage,and efficiency of a single device were 1.636 μA/cm2,3.16 V,and 13.4%,respectively.

主 题 词：GaN semiconductor isotope battery 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.1007/s11431-011-4739-8

馆 藏 号：203334348...