Design and optimization of Ge profiles for improved thermal stability of SiGe HBTs

作     者：付强 张万荣 金冬月 丁春宝 赵彦晓 张瑜洁 

作者机构：College of Electronic Information and Control EngineeringBeijing University of Technology College of PhysicsLiaoning University 

基　　金：supported by the National Natural Science Foundation of China(Nos.60776051,61006059,61006044) the Beijing Municipal Natural Science Foundation(Nos.4082007,4122014) the Beijing Municipal Education Committee(Nos.KM200710005015, KM200910005001 ) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第6期

页      码：44-48页

摘      要：The impact of the three state-of-the-art germanium（Ge） profiles（box,trapezoid and triangular） across the base of SiGe heterojunction bipolar transistors（HBTs） under the condition of the same total amount of Ge on the temperature dependence of current gainβand cut-off frequency f_T,as well as the temperature profile,are *** can be found that although theβof HBT with a box Ge profile is larger than that of the others,it decreases the fastest as the temperature increases,while theβof HBT with a triangular Ge profile is smaller than that of the others,but decreases the slowest as the temperature *** the other hand,the f_T of HBT with a trapezoid Ge profile is larger than that of the others,but decreases the fastest as the temperature increases,and the f_T of HBT with a box Ge profile is smaller than that of the others,but decreases the slowest as temperature ***,the peak and surface temperature difference between the emitter fingers of the HBT with a triangular Ge profile is higher than that of the *** on these results,a novel segmented step box Ge profile is proposed,which has modestβand f_T,and trades off the temperature sensitivity of current gain and cut-off frequency,and the temperature profile of the device.

主 题 词：SiGe heterojunction bipolar transistor Ge profile thermal stability thermal characteristics 

学科分类：080903[080903] 0808[工学-自动化类] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 0703[理学-化学类] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1088/1674-4926/34/6/064001

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