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Particle detector readout integrated circuit of 0.18μm technology with 164 e equivalent noise charge

Particle detector readout integrated circuit of 0.18μm technology with 164 e equivalent noise charge

作     者:LI Xiangyu LIU Haifeng ZHANG Qi SUNYihe 

作者机构:Tsinghua National Laboratory for Information Science and Technology Institute of Mieroelectronics Tsinghua University Beijing 100084 China 

基  金:supported by the National Natural Science Foundation of China (No.61006021) 

出 版 物:《Nuclear Science and Techniques》 (核技术(英文))

年 卷 期:2011年第22卷第6期

页      码:358-365页

摘      要:Integrated circuits of deep submicron(DSM) CMOS technology are advantageous in volume density, power consumption and thermal noise for multichannel particle detection systems,but there are challenges in the front-end circuit *** this paper,we present a 0.18μm CMOS front-end readout circuit for low noise CdZnTe detectors in tens of pF *** to the noise and gate leak problems in DSM technologies are discussed in detail.A prototype chip was designed,with a charge sensitive preamplifier,a 4th order semi-Gaussian shaper and several output *** results show that the chip has an equivalent noise charge of 164 e,without connecting it to a detector,with an integral nonlinearity of<0.21%and differential nonlinearity of<3.75%.

主 题 词:电荷灵敏前置放大器 CMOS技术 粒子探测器 集成电路 热噪声 前端电路设计 DSM技术 读数 

学科分类:0711[理学-心理学类] 082704[082704] 07[理学] 08[工学] 0827[工学-食品科学与工程类] 

核心收录:

D O I:10.13538/j.1001-8042/nst.22.358-365

馆 藏 号:203356166...

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