1 550 nm long-wavelength vertical-cavity surface emitting lasers
作者机构：State Key Laboratory of Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Material Science and Optoelectronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China
基 金：supported by the National High Technology and Development Program of China(No.2015AA016902)
出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)
年 卷 期：2018年第14卷第5期
页 码：342-345页
摘 要：A 1 550 nm long-wavelength vertical cavity surface emitting laser （VCSEL） on InP substrate is designed and fabri- cated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn（l-x-y）As/InP, and 6 strain compensated AlxGayln（l-x-y）As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection （DBR） mirror system has been formed by fabricat- ing 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW opera- tion at room temperature.
主 题 词：长波长 表面 垂直 激光 发射极 SiO2/Si 计算设计 取向附生
学科分类：080901[080901] 0809[工学-计算机类] 08[工学] 080401[080401] 0804[工学-材料学] 0803[工学-仪器类]
核心收录：
D O I：10.1007/s11801-018-8037-6
馆 藏 号：203379500...
