A Low-Power,Single-Poly,Non-Volatile Memory for Passive RFID Tags

作     者：赵涤燹 闫娜 徐雯 杨立吾 王俊宇 闵昊 Zhao Dixian;Yan Na;Xu Wen;Yang Liwu;Wang Junyu;Min Hao

作者机构：复旦大学专用集成电路与系统国家重点实验室上海201203 中芯国际集成电路制造(上海)有限公司设计服务处上海201203 

基　　金：国家高技术研究发展计划资助项目(批准号:2005AA1Z1300)~~ 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2008年第29卷第1期

页      码：99-104页

摘      要：Single-poly,576bit non-volatile memory is designed and implemented in an SMIC 0.18μm standard CMOS process for the purpose of reducing the cost and power of passive RFID tag chips. The memory bit cell is designed with conventional single-poly pMOS transistors, based on the bi-directional Fowler-Nordheim tunneling effect, and the typical program/erase time is 10ms for every 16bits. A new ,single-ended sense amplifier is proposed to reduce the power dissipation in the current sensing scheme. The average current consumption of the whole memory chip is 0.8μA for the power supply voltage of 1.2V at a reading rate of 640kHz.

主 题 词：RFID single-poly non-volatile memory standard CMOS process sense amplifier low power 

学科分类：08[工学] 081201[081201] 0812[工学-测绘类] 

核心收录：

D　O　I：10.3321/j.issn:0253-4177.2008.01.018

馆 藏 号：203386275...