Approximate Well Width and Optical Gain Formulas of 1 .555μm In_(1-x-y )Ga_y Al_x As Compressively Strained Quantum- Well Laser

作     者：张冶金 陈维友 蒋恒 刘彩霞 刘式墉 

作者机构：集成光电子学国家重点实验室吉林大学实验区长春130023 

基　　金：国家自然科学基金! ( 6 99370 19) 吉林省优秀青年科学基金! ( 19990 5 2 9-2 ) 国家高技术 ( 86 3)研究和发展计划 !( 86 3-30 7-1 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2001年第22卷第1期

页      码：11-17页

摘      要：Using Harrison s model and anisotropic parabolic approximation,the band structure of In1- x- y Gay Alx As compressively strained quantum wells is *** design lasers with1.55μm wavelength,it is necessary to an- alyze the well width,differential gain,transparency carrier density and the characteristic gain for an arbitrary com- *** useful empirical formulas are also presented.

主 题 词：In1- x- y Gay Alx As QW linear gain differential gai 

学科分类：080901[080901] 0809[工学-计算机类] 08[工学] 080401[080401] 0804[工学-材料学] 0803[工学-仪器类] 

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