The Design of Ultra-Low Power Adder Cell in 90 and 180 nm CMOS Technology

作     者：Masoud Sabaghi Saeid Marjani Abbas Majdabadi Masoud Sabaghi;Saeid Marjani;Abbas Majdabadi

作者机构：Laser and Optics Research School Nuclear Science and Technology Research School Atomic Energy Organization of Iran Tehran Iran Department of Electrical Engineering Ferdowsi University of Mashhad Mashhad Iran 

出 版 物：《Circuits and Systems》 (电路与系统（英文）)

年 卷 期：2016年第7卷第2期

页      码：58-67页

摘      要：In this paper, an ultra-low power adder cell is proposed. With cascading two XNOR cells, the sum of two inputs is achieved. Regarding to advantages of m-GDI XNOR cell, we constructed the adder cell based on this architecture. The simulation results show that the power consumption of the adder cell designed with GDI technology is 12.993 μw, whereas for this cell designed with m-GDI technology is 4.1628 μw, which both are designed at 0.18 um technology. Moreover, simulation results in 90 nm CMOS technology for m-GDI adder cell show average power consumption of 0.90262 μw and 6.3222 μw in 200 MHz and 2GHz, respectively.

主 题 词：Adder Cell Gate-Diffusion-Input (GDI) Bit-Serial Adder 

学科分类：08[工学] 0812[工学-测绘类] 

D　O　I：10.4236/cs.2016.72007

馆 藏 号：203458142...