Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors

作     者：Bo Gan Tingcun Wei Wu Gao Huiming Zeng Yann Hu 

作者机构：School of Computer Science and Technology Northwestern Polytechnical University Xi’an China 

出 版 物：《Journal of Signal and Information Processing》 (信号与信息处理（英文）)

年 卷 期：2013年第4卷第2期

页      码：123-128页

摘      要：In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.

主 题 词：CdZnTe Detector Low Noise Front-End Readout CMOS 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

D　O　I：10.4236/jsip.2013.42017

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