Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

作     者：李金涛 陈松岩 亓东锋 黄巍 李成 赖虹凯 

作者机构：School of PhysicsMechanical & Electrical EngineeringXiamen University 

基　　金：supported by the National Natural Science Foundation of China (No.60837001) the Major State Basic Research Development Program of China (No.2007CB613404) 

出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)

年 卷 期：2011年第7卷第3期

页      码：175-177页

摘      要：The band structure of the confined states is calculated for Si/SiGe multi-quantum well infrared photodetector(M-QWIP).The influence of the Ge component in pseudosubstrate on the energy band structure of Si/Si0.54Ge0.46 multi-quantum wells(MQWs) is *** is found that the high energy levels in the MQWs move up while the low energy levels move down as the Ge component in pseudosubstrate *** influence of the barrier width on the energy band structure of MQWs is also studied based on the 6 × 6 k.p *** results show that the Si barrier between 5 nm and 10 nm is optimized to enhance the intersubband absorption in the MQWs.

主 题 词：Band structure Germanium Infrared detectors Optoelectronic devices Semiconductor quantum wells 

学科分类：080903[080903] 080901[080901] 0809[工学-计算机类] 08[工学] 080401[080401] 0804[工学-材料学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 0803[工学-仪器类] 

核心收录：

D　O　I：10.1007/s11801-011-0164-2

馆 藏 号：203518592...