Influence of Interconnection Configuration on Thermal Dissipation of ULSI Interconnect Systems

作     者：肖夏 姚素英 阮刚 Xiao Xia;Yao Suying;Ruan Gang

作者机构：天津大学电子信息工程学院专用集成电路设计中心天津300072 复旦大学信息科学与工程学院上海200433 

基　　金：教育部留学归国基金资助项目~~ 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2006年第27卷第3期

页      码：516-523页

摘      要：The effects of adjacent metal layers and space between metal lines on the temperature rise of multilevel ULSI interconnect lines are investigated by modeling a three-layer interconnect. The heat dissipation of various metallization technologies concerning the metal and low-k dielectric employment is simulated in detail. The Joule heat generated in the interconnect is transferred mainly through the metal lines in each metal layer and through the path with the smallest thermal resistance in each Ield layer. The temperature rises of Al metallization are approximately pAl/pCu times higher than those of Cu metallization under the same conditions. In addition, a thermal problem in 0.13μm globe interconnects is studied for the worst case, in which there are no metal lines in the lower interconnect layers. Several types of dummy metal heat sinks are investigated and compared with regard to thermal efficiency,influence on parasitic capacitance,and optimal application by combined thermal and electrical simula- tion.

主 题 词：ULSI interconnect heat dissipation geometrical configuration 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.3969/j.issn.1674-4926.2006.03.025

馆 藏 号：203532063...