Band Edge Model of (101)-Biaxial Strained Si

作     者：宋建军 张鹤鸣 戴显英 胡辉勇 宣荣喜 Song Jianjun;Zhang Heming;Dai Xianying;Hu Huiyong;Xuan Rongxi

作者机构：西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室西安710071 

基　　金：the National Ministries and Commissions of China(Nos.51308040203 9140A08060407DZ0103)~~ 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2008年第29卷第9期

页      码：1670-1673页

摘      要：A band edge model in （101）-biaxial strained Si on relaxed Si1-x Gex alloy,or monoclinic Si （m-Si）,is presented using the k · p perturbation method coupled with deformation potential theory. Results show that the [001], [001], [100], [100] valleys constitute the conduction band （CB） edge,which moves up in electron energy as the Ge fraction （x） increases. Furthermore,the CB splitting energy is in direct proportion to x and all the valence band （VB） edges move up in electron energy as x increases. In addition, the decrease in the indirect bandgap and the increase in the VB edge splitting energy as x increases are found. The quantitative data from the models supply valuable references for the design of the devices.

主 题 词：strained Si band edge k · p method 

学科分类：07[理学] 070205[070205] 0702[理学-物理学类] 

核心收录：

D　O　I：10.3321/j.issn:0253-4177.2008.09.006

馆 藏 号：203532798...