On the design of base-collector junction of InGaAs/InP DHBT

作     者：JIN Zhi LIU XinYu 

作者机构：Microwave IC DepartmentInstitute of MicroelectronicsChinese Academy of SciencesBeijing 100029China 

基　　金：Supported by the National Basic Research Program of China("973")(Grant No.2002CB311902) 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2009年第52卷第6期

页      码：1672-1678页

摘      要：The effects of the composite-collector structure and the δ-doping density in InGaAs/InP DHBT on the Kirk current have been *** effective grade layer in the discretely graded layer goes into the InGaAs setback *** formulas of the maximum doping density,the maximum Kirk current,and the corresponding δ-doping density are derived under different Kirk-effect *** the maximum collector doping density and the maximum Kirk current are dependent on the δ-doping *** opti-mizing the delta doping,the Kirk current density can be greatly increased.

主 题 词：InP DHBT composite collector kirk current 

学科分类：080903[080903] 0810[工学-土木类] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 0702[理学-物理学类] 0812[工学-测绘类] 

核心收录：

D　O　I：10.1007/s11431-008-0195-5

馆 藏 号：203556357...