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Design of 10 GHz eight-phase voltage controlled oscillator in 90nm CMOS

Design of 10 GHz eight-phase voltage controlled oscillator in 90nm CMOS

作     者:CHEN Ying-mei WANG Hui YAN Shuang-chao ZHANG Li LI Wei 

作者机构:Institute of Radio Frequency and Optical Electronic Integrated CircuitsSoutheast University 

基  金:supported by the National High Technology Research and Development Program of China(2011AA010301) the National Natural Science Foundation of China(60976029) 

出 版 物:《The Journal of China Universities of Posts and Telecommunications》 (中国邮电高校学报(英文版))

年 卷 期:2012年第19卷第6期

页      码:113-117页

摘      要:A novel 10 GHz eight-phase voltage-controlled oscillator (VCO) architecture applied in clock and data recovery (CDR) circuit for 40 Gbit/s optical communications system is proposed. Compared with the traditional eight-phase oscillator, a new ring CL ladder filter structure with four inductors is proposed. The VCO is designed and fabricated in IBM 90 nm complementary metal-oxide-semiconductor transistor (CMOS) technology. Measurement results show the tuning range is 9.2 GHz-11.0 GHz and the phase noise of - 108.85 dBc/Hz at 1 MHz offset from the carrier frequency of 10 GHz. The chip area of VCO is 500 μm × 685 μm and the power dissipation is 17.4 mW with the 1.2 V supply voltage.

主 题 词:VCO eight-phase LC ring oscillator CL ladder filtering 

学科分类:080903[080903] 080904[080904] 0809[工学-计算机类] 08[工学] 

核心收录:

D O I:10.1016/S1005-8885(11)60325-7

馆 藏 号:203565635...

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