Design and analysis of 20 Gb/s inductorless limiting amplifier in 65 nm CMOS technology

作     者：何睿 许建飞 闫娜 孙杰 边历嵌 闵昊 

作者机构：Department of Microelectronic Fudan University Jinan Ruitong Electric Service LTD 

基　　金：Project supported by the National High Technology Research and Development Program of China(No.2011AA010404) the GeneralProgram for International Science and Technology Cooperation Projects of China(No.2010DFB13040) the National Natural Science Foundation of China(No.61076028) the Doctoral Program of Higher Education of China(No.20100071120026) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第10期

页      码：91-97页

摘      要：A high speed inductorless limiting amplifier （LA） in an optical communication receiver with the work- ing speed up to 20 Gb/s is presented. The LA includes an input matching network, a four-stage 3rd order amplifier core, an output buffer for the test and a DC offset cancellation （DCOC）. It uses the active interleaving feedback technique both to broaden the bandwidth and achieve the flatness response. Based on our careful analysis of the DCOC and stability, an error amplifier is added to the DCOC loop in order to keep the offset voltage reasonable. Fabricated in the 65 nm CMOS technology, the LA only occupies an area of 0.45 × 0.25 mm2 （without PAD）. The measurement results show that the LA achieves a differential voltage gain of 37 dB, and a 3-dB bandwidth of 16.5 GHz. Up to 26.5 GHz, the Sddlm and Sdd22 are less than -16 dB and -9 dB. The chip excluding buffer is supplied by 1.2 V VDD and draws a current of 50 mA.

主 题 词：inductorless limiting amplifier optical communication interleaving feedback DCOC 

学科分类：0808[工学-自动化类] 0809[工学-计算机类] 080902[080902] 08[工学] 0805[工学-能源动力学] 0703[理学-化学类] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1088/1674-4926/35/10/105002

馆 藏 号：203628110...