Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design(9)

作     者：LIN Hong-liang ZENG Xiang-hua SHI Shi-man TIAN Hai-jun YANG Mo CHU Kai-ming YANG Kai LI Quan-su 林鸿亮;曾祥华;石时曼;田海军;杨默;储开明;杨凯;李全素

作者机构：College of Physics Science and Technology & Institute of Optoelectronic Technology Yangzhou University Yangzhou Change Light Optoelectronic Co. Ltd. 

基　　金：supported by the National Key Research and Development Program of China(No.2017YFB0403101) the National Natural Science Foundation of China(No.61474096) 

出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)

年 卷 期：2019年第15卷第2期

页      码：113-116页

摘      要：Epitaxial growths of the GaAs/AlGaAs-based 940 nm infrared light emitting diodes(LEDs) with dual junctions were carried out by using metalorganic chemical vapor deposition(MOCVD) with different doping concentrations and Al contents in Al_xGa_(1-x)As *** their optoelectric properties show that the optimal design for tunneling region corresponds to P^(++) layer with hole concentration up to 1×10^(20) cm^(-3), N^(++) layer electron concentration up to 5×10^(19) cm^(-3) and constituent Al_(0.2)Ga_(0.8)As in the tunneling junction *** optimized dual-junction LED has a forward bias of 2.93 V at an injection current of 50 mA, and its output power is 24.5 mW, which is 104% larger than that of the single junction(12 mW).Furthermore, the optimized device keeps the same spectral characteristics without introducing excessive voltage droop.

主 题 词：Optimization concentrations characteristics 

学科分类：08[工学] 0803[工学-仪器类] 

核心收录：

D　O　I：10.1007/s11801-019-8113-6

馆 藏 号：203630259...