3-D TCAD simulation study of the single event effect on 25 nm raised source-drain FinFET

作     者：QIN JunRui CHEN ShuMing CHEN JianJun 

作者机构：School of Computer ScienceNational University of Defense TechnologyChangsha 410073China 

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 60836004 61006070 and 61076025) 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2012年第55卷第6期

页      码：1576-1580页

摘      要：Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is *** on the calibrated 3-D models by process simulation,it is found that the amount of charge collected increases linearly as the linear energy transfer(LET) increases for both n-type and p-type FinFET hits,but the single event transient(SET) pulse width is not linear with the incidence LET and the increasing rate will gradually reduce as the LET *** impacts of wafer thickness on the charge collection are also analyzed,and it is shown that a larger thickness can bring about stronger charge *** reducing the wafer thickness could mitigate the SET effect for FinFET technology.

主 题 词：FinFET single event effect single event transient charge collection 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 0825[工学-环境科学与工程类] 

核心收录：

D　O　I：10.1007/s11431-012-4758-0

馆 藏 号：203642311...