AIR-GAP-BASED RF COAXIAL TSV AND ITS CHARACTERISTIC ANALYSIS

作     者：Yu Le Sun Jiabin Zhang Chunhong Wang Zhaoxin Zhang Chao Yang Haigang 

作者机构：Institute of ElectronicsChinese Academy of Sciences University of Chinese Academy of Sciences 

基　　金：Sponsored by the National Natural Science Foundation of China(No.61271149) 

出 版 物：《Journal of Electronics(China)》 (电子科学学刊（英文版）)

年 卷 期：2013年第30卷第6期

页      码：587-598页

摘      要：Many 3D IC applications such as MEMS and RF systems require Through-Silicon Via （TSV） with operations for high-speed vertical communication. In this paper, we introduce a novel air-gap coaxial TSV that is suiTab, for such RF applications. Firstly, the detailed fabrication process is described to explain how to acquire such a structure. Then, an Resistor Inductance Conductance Capacitance （RLGC） model is developed to profile the transverse electromagnetic field effect of the proposed air-gap TSV. The model is further verified by a 3D field solver program through the S-parameter comparison. With reference to the numerically simulated results, this analytical model delivers a maximum deviation of less than 6%0, on the conditions of varying diameters, outer to inner radius ratios, and SU-8 central angles, etc. Taking advantages of scalability of the model, a number of air-gap-based TSV designs are simulated, providing 1.6-4.0 times higher bandwidth than the con- ventional coaxial TSVs and leading to an efficient high frequency vertical RF interconnection solution for 3D ICs.

主 题 词：Through-Silicon Via (TSV) Three dimensional Integrated Circuits (3D IC) Air-gap Coaxial Radio Frequency-Interconnect (RF-I) 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 

D　O　I：10.1007/s11767-013-3088-0

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