A novel design approach of charge plasma tunnel FET for radio frequency applications

作     者：Shivendra Yadav Alish Pamnani Dheeraj Sharma Anju Gedam Atul Kumar Neeraj Sharma 

作者机构：Indian Institute of Information Technology Design and Manufacturing National Institute of Technology Ramrao Adik Institute of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2019年第40卷第5期

页      码：77-83页

摘      要：In this paper, the impact of extra electron source(EES) and dual metal gate engineering on conventional charge plasma TFET(CP-TFET) have been done for improving DC and analog/RF parameters. CP-TFET structure is upgraded to double source CP-TFET(DS-CP-TFET) by placing an EES below the source/channel junction for enhancing the device performance in terms of driving current and RF figures of merit(FOMs). But, in spite of these pros, the approach is having cons of higher leakage current similar to MOSFET and negative conductance(inherent nature of TFET). Both the issues have been resolved in the double source dual gate CP-TFET(DS-DG-CP-TFET) by gate workfunction engineering and drain underlapping respectively. Additionally,for getting the optimum performance of DS-DG-CP-TFET, the device sensitivity has been investigated in terms of position of EES,length of drain electrode and workfunction of gate electrode 1(GE1).

主 题 词：ambipolar current charge plasma EES and dual metal gate engineering 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.1088/1674-4926/40/5/052901

馆 藏 号：203666749...