Design and analysis on four stage SiGe HBT low noise amplifier

作     者：井凯 Zhuang Yiqi Li Zhenrong Lin Zhiyu 

作者机构：Department of MicroelectronicsXidian University State Key Laboratory of Wide Band Gap Semiconductor 

基　　金：Supported by the National Natural Science Foundation of China(No.61076101 61204092 61306033) 

出 版 物：《High Technology Letters》 (高技术通讯（英文版）)

年 卷 期：2015年第21卷第3期

页      码：358-363页

摘      要：Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is *** amplifier adopts a method of gain allocation on multiple stages to avoid the limitation on linearity especially with the addition of negative gain on the third *** realize gain flatness,extra zero is introduced to compensate the gain roll-off formed by pole,and local shunt-shunt negative feedback is used to widen the bandwidth as well as optimize circuit s *** results have shown that in 6 ~14GHz,this circuit achieves noise figure(NF) less than 3dB,gain of 17.8dB(+0.2dB),input and output reflection parameters of less than- 10 dB,and the K factor is above 1.15.

主 题 词：low noise amplifier (LNA) pole-zero cancellation noise figure (NF) SiGe HBT BJT linearity 

学科分类：080903[080903] 080902[080902] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.3772/j.issn.1006-6748.2015.03.017

馆 藏 号：203720856...