Design and Fabrication of a High-Voltage nMOS Device

作     者：李桦 宋李梅 杜寰 韩郑生 Li Hua;Song Limei;Du Huan;Han Zhengsheng

作者机构：中国科学院微电子研究所北京100029 

基　　金：国家重点基础研究发展计划资助项目(批准号:2003CB314705)~~ 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2005年第26卷第8期

页      码：1489-1494页

摘      要：High-voltage nMOS devices are fabricated successfully and the key technology parameters of the process are optimized by TCAD software. Experiment results show that the device＇s breakdown voltage is 114V, the threshold voltage and maximum driven ability are 1.02V and 7.5mA（W/L = 50）, respectively. Experimental results and simulation ones are compared carefully and a way to improve the breakdown performance is proposed.

主 题 词：high-voltage nMOS devices simulation fabrication 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.3969/j.issn.1674-4926.2005.08.002

馆 藏 号：203731963...