Design of 2.1GHz CMOS Low Noise Amplifier

作     者：LI En-ling SONG Lin-hong YANG Dang-qiang XUE Ying CHU Meng 

作者机构：Science School Xi'an University of Technology Xi'an 710048 P.R. China 

基　　金：ThisworkissupportedbyPlannedScientificResearchProjectFoundationoftheEducationDepartmentofShanxiProvince 

出 版 物：《The Journal of China Universities of Posts and Telecommunications》 (中国邮电高校学报（英文版）)

年 卷 期：2006年第13卷第1期

页      码：71-74页

摘      要：This paper discusses the design of a fully differential 2.1 GHz CMOS low noise amplifier using the TSMC 0.25 μm CMOS process. Intended for use in 3G, the low noise amplifier is fully integrated and without off-chip components. The design uses an LC tank to replace a large inductor to achieve a smaller die area, and uses shielded pad capacitances to improve the noise performance. This paper also presents evaluation results of the design.

主 题 词：LNA LC tank noise figure shielded pads 

学科分类：080904[080904] 0810[工学-土木类] 0809[工学-计算机类] 08[工学] 080402[080402] 0804[工学-材料学] 081001[081001] 

核心收录：

D　O　I：10.1016/S1005-8885(07)60085-5

馆 藏 号：203800025...