A fuzzy-logic-based approach to accurate modeling of a double gate MOSFET for nanoelectronic circuit design

作     者：F.Djeffal A.Ferdi M.Chahdi 

作者机构：LEADepartment of ElectronicsUniversity of Batna05000 BatnaAlgeria LEPCMDepartment of ElectronicsUniversity of Batna05000 BatnaAlgeria 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2012年第33卷第9期

页      码：43-49页

摘      要：The double gate （DG） silicon MOSFET with an extremely short-channel length has the appropriate fea- tures to constitute the devices for nanoscale circuit design. To develop a physical model for extremely scaled DG MOSFETs, the drain current in the channel must be accurately determined under the application of drain and gate voltages. However, modeling the transport mechanism for the nanoscale structures requires the use of overkill meth- ods and models in terms of their complexity and computation time （self-consistent, quantum computations ）. Therefore, new methods and techniques are required to overcome these constraints. In this paper, a new approach based on the fuzzy logic computation is proposed to investigate nanoscale DG MOSFETs. The proposed approach has been implemented in a device simulator to show the impact of the proposed approach on the nanoelectronic cir- cuit design. The approach is general and thus is suitable for any type ofnanoscale structure investigation problems in the nanotechnology industry.

主 题 词：nanoscale circuit DG MOSFET fuzzy modelling computational cost circuit design 

学科分类：080903[080903] 0808[工学-自动化类] 0809[工学-计算机类] 080902[080902] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 0703[理学-化学类] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1088/1674-4926/33/9/094001

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