Reconfigurable dual-band low noise amplifier design and realization

作     者：唐旭升 黄风义 张有明 唐欣 

作者机构：RF & OEIC Research Institute National Mobile Communications Research Laboratory Southeast University 

基　　金：supported by the National High Technology Research and Development Program of China(No.2009AA01Z261) the National Science and Technology Major Special Project(Nos.2009ZX03007-001,2012ZX03001-019) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第5期

页      码：86-92页

摘      要：A reconfigurable dual-band LNA is presented. The LNA employs switching capacitors and circuit in to realize the dual-band operation. These methodologies are used to design and implement a reconfigurable LNA for IMT-A and UWB application. The LNA is implemented using TSMC-0.13 μm CMOS technology. Measured performance shows an input matching of better than -13.5 dB, a voltage gain of 18-22.8 dB, with an NF of 4.3-4.7 dB in the band of 3.4-3.6 GHz, and an input matching of better than -9.7 dB, a voltage gain of 14.7-22.4 dB, and with an NF of 3.7-4.9 dB in the band of 4.2-4.8 GHz. According to the measure results, the proposed LNA achieves dual-band operation, and it proves the feasibility of the proposed topology.

主 题 词：LNA reconfigurable dual-band IMT-A UWB CMOS 

学科分类：0808[工学-自动化类] 0809[工学-计算机类] 080902[080902] 08[工学] 081203[081203] 0805[工学-能源动力学] 0703[理学-化学类] 0835[0835] 0702[理学-物理学类] 0812[工学-测绘类] 

核心收录：

D　O　I：10.1088/1674-4926/35/5/055004

馆 藏 号：203847874...