Design of tunneling injection quantum dot lasers

作     者：JIA Guo-zhi YAO Jiang-hong SHU Yong-chun WANG Zhan-guo 

作者机构：Key Lab. for Weak-Light Nonlinear Photonics Materials of Education Ministry of China and Key Lab. of Photonics Materials and Technology for Information Science of Tianjin City TEDA Applied Physics School Nankai University Tianjin 300475 China Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China 

基　　金：the National Natural Science Foundationof China (Grant No. 60476042) and Tianjin City Research Founda-tion for Key Basic Research  China (Grant No. 06YFJZJC01100) 

出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)

年 卷 期：2007年第3卷第1期

页      码：4-6页

摘      要：To implement high quality tunneling injection quantum dot lasers, effects of primary factors on performance of the tunneling injection quantum dot lasers were investigated. The considered factors were tunneling probability, tun- neling time and carriers thermal escape time from the quantum well. The calculation results show that with increas- ing of the ground-state energy level in quantum well, the tunneling probability increases and the tunneling time decreases, while the thermal escape time decreases because the ground-state energy level is shallower. Longitudinal optical phonon-assisted tunneling can be an effective method to solve the problem that both the tunneling time and the thermal escape time decrease simultaneously with the ground-state energy level increasing in quantum well.

主 题 词：隧道注入 量子点激光器 设计 半导体激光器 

学科分类：0808[工学-自动化类] 0809[工学-计算机类] 08[工学] 0805[工学-能源动力学] 0803[工学-仪器类] 0702[理学-物理学类] 

D　O　I：10.1007/s11801-007-6108-1

馆 藏 号：203870821...