A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design

作     者：陈志刚 张杨 罗卫军 张仁平 杨富华 王晓亮 李晋闽 Chen Zhigang;Zhang Yang;Luo Weijun;Zhang Renping;Yang Fuhua;Wang Xiaoliang;Li Jinmin

作者机构：中国科学院半导体研究所超晶格国家重点实验室北京100083 中国科学院半导体研究所半导体材料科学重点实验室北京100083 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2008年第29卷第9期

页      码：1654-1656页

摘      要：We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate. Using this new layout,we can change the aspect ratio （ratio of top gate dimension to gate length） and modify the shape of the T-gate freely. Therefore, we obtain a 0.18μm gate-length AlGaN/GaN HEMT with a unity current gain cutoff frequency （fT） of 65GHz. The aspect ratio of the T-gate is 10. These single finger devices also exhibit a peak extrinsic transconductance of 287mS/mm and a maximum drain current as high as 980mA/mm.

主 题 词：GaN HEMT T-gate layout 

学科分类：080903[080903] 0809[工学-计算机类] 08[工学] 080501[080501] 0805[工学-能源动力学] 080502[080502] 

核心收录：

D　O　I：10.3321/j.issn:0253-4177.2008.09.002

馆 藏 号：203871267...