Research on single event transient pulse quenching effect in 90 nm CMOS technology

作     者：QIN JunRui CHEN ShuMing LIU BiWei CHEN JianJun LIANG Bin LIU Zheng 

作者机构：School of Computer Science National University of Defense Technology Changsha 410073 China 

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 60836004 and 61006070) 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2011年第54卷第11期

页      码：3064-3069页

摘      要：Since single event transient pulse quenching can reduce the SET(single event transient) pulsewidths effectively,the charge collected by passive device should be maximized in order to minimize the propagated *** the perspective of the layout and circuit design,the SET pulsewidths can be greatly inhibited by minimizing the layout spacing and signal propagation delay,which sheds new light on the radiation-hardened ICs(integrated circuits) *** show that the SET pulsewidths of propagation are not in direct proportion to the LET(linear energy transfer) of incident particles,thus the defining of the LET threshold should be noted when SET/SEU(single event upset) occurs for the radiation-hardened *** capability of anti-radiation meets the demand when LET is high but some soft errors may occur when LET is ***,radiation experiments should be focused on evaluating the LET that demonstrates the worst response to the circuit.

主 题 词：SET propagation radiation hardening by design charge collection charge share quenching 

学科分类：0711[理学-心理学类] 082604[082604] 07[理学] 08[工学] 0826[工学-生物医学工程类] 

核心收录：

D　O　I：10.1007/s11431-011-4579-6

馆 藏 号：203888041...