The design and fabrication of a GaN-based monolithic light-emitting diode array

作     者：詹腾 张扬 李璟 马骏 刘志强 伊晓燕 王国宏 李晋闽 

作者机构：Semiconductor Lighting R & D CenterChinese Academy of SciencesInstitute of SemiconductorsChinese Academy of Sciences 

基　　金：supported by the National High Technology Research and Development of China(Nos.2011AA03A108 2011AA03A105) 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第9期

页      码：78-81页

摘      要：We report a new monolithic structure of GaN-based light-emitting diode （LED） which can be operated under high voltage or alternative current. Differing from the conventional single LED chip, the monolithic lightemitting diode （MLED） array contains microchips which are interconnected in series or parallel. The key chip fabrication processing methods of the monolithic LED array include deep dry etching, sidewall insulated protec- tion, and electrode interconnection. A 12 V GaN-based blue high voltage light emitting diode was designed and fabricated in our experiment. The forward current-voltage characteristics of MLEDs were consistent with those of conventional single junction light emitting diodes.

主 题 词：GaN LED monolithic array high voltage 

学科分类：0808[工学-自动化类] 0809[工学-计算机类] 08[工学] 0805[工学-能源动力学] 0703[理学-化学类] 0803[工学-仪器类] 0702[理学-物理学类] 

核心收录：

D　O　I：10.1088/1674-4926/34/9/094010

馆 藏 号：203904337...