An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network

作     者：曾轩 陈晓娟 刘果果 袁婷婷 陈中子 张辉 王亮 李诚瞻 庞磊 刘新宇 刘键 Zeng Xuan;Chen Xiaojuan;Liu Guoguo;Yuan Tingting;Chen Zhongzi;Zhang Hui;Wang Liang;Li Chengzhan;Pang Lei;Liu Xinyu;Liu Jian

作者机构：中国科学院微电子研究所北京100029 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2008年第29卷第8期

页      码：1445-1448页

摘      要：8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of the device, a lossy RC network is used at the input of the device. The developed internally matched power amplifier module exhibits 43dBm （20W） power output with a 7.3dB linear gain,38.1% PAIE,and combined power efficiency of 70.6% at 8GHz.

主 题 词：AlGaN/GaN HEMTs internally match power combining power amplifier 

学科分类：080902[080902] 0809[工学-计算机类] 08[工学] 

核心收录：

D　O　I：10.3321/j.issn:0253-4177.2008.08.004

馆 藏 号：203924715...