A study of the operating parameters and barrier thickness of Al_(0.08)In_(0.08)Ga_(0.84)N/Al_xIn_yGa_(1-x-y)N double quantum well laser diodes

作     者：A.J.GHAZAI S.M.THAHAB H.ABU HASSAN Z.HASSAN 

作者机构：Nano-Optoelectronics Research and Technology LaboratorySchool of PhysicsUniversiti Sains Malaysia Material Engineering DepartmentCollege of EngineeringUniversity of Kufa 

基　　金：conducted under Science Fund,Cycle 2007,of The Ministry of Science,Technology and Innovation,Malaysia The financial support from Universiti Sains Malaysia is gratefully acknowledged 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2011年第54卷第1期

页      码：47-51页

摘      要：The operating parameters such as the internal quantum efficiency (ηi),internal loss (αi) and transparent threshold current density (J0) of double quantum well laser diodes were investigated and identified using the program,Integrated System Engineering-Technical Computer Aided Design (ISE-TCAD). Various thicknesses (6,7,8,10,12 nm) of AlxInyGa1-x-yN barriers with (3 nm) Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current (Ith),and the highest output power (Pop) were 116 mA and 196 mW respectively,at barriers thickness of 6 nm,Al mole fraction of 10% and In mole fraction of 1%,at an emission wavelength of 359.6 nm.

主 题 词：激光二极管 双量子阱 厚度 运行参数 计算机辅助设计 阈值电流密度 摩尔分数 低阈值电流 

学科分类：0810[工学-土木类] 080901[080901] 0809[工学-计算机类] 08[工学] 080401[080401] 0804[工学-材料学] 0805[工学-能源动力学] 0803[工学-仪器类] 0702[理学-物理学类] 0812[工学-测绘类] 

核心收录：

D　O　I：10.1007/s11431-010-4183-1

馆 藏 号：203949167...