Design of Synthesized DBRs for Long-Wavelength InP-Based Vertical-Cavity Surface-Emitting Lasers

作     者：黄占超 吴惠桢 

作者机构：StateKeyLaboratoryofFunctionalMaterialsforInformaticsShanghaiInstituteofMicrosystemandInformationTechnologyChineseAcademyofSciencesShanghai200050 

基　　金：国家973计划 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2004年第21卷第2期

页      码：316-319页

摘      要：We report applications of a metallic film and a phase matching layer (PML) to increase the reflectivity of the cavity mirror in a long-wavelength InP-based vertical-cavity surface-emitting laser (VCSEL). The synthesis of the InGaAsP/InP distributed-Bragg reflector (DBR) with an Au film and the InP PML leads to the decrease of periods of the DBR multilayer stacks from 33 to 20 while keeping the reflectivity of the structure over 99%. The reflectivity over the whole forbidden band is significantly increased and become flatter compared to the bare DBR. The use of smaller DBR periods in a long wavelength VCSEL makes the epitaxial growth well controllable, decrease of the heat resistance, and decrease of the in-series electrical resistance of the devices. This can improve the reliability of the VCSEL growth and possibly cut down the cost of VCSEL devices.

主 题 词：Surface emitting lasers 

学科分类：080901[080901] 0809[工学-计算机类] 08[工学] 080401[080401] 0804[工学-材料学] 0805[工学-能源动力学] 0704[理学-天文学类] 0803[工学-仪器类] 

核心收录：

D　O　I：10.1088/0256-307X/21/2/028

馆 藏 号：203967455...