摘要：The optimizations to metal gate structure and film process were extensively investigated for great metalgate stress（MGS） in 20 nm high-k/metal-gate-last（HKVMG-last） nMOS *** characteristics of advanced MGS technologies on device performances were studied through a process and device simulation by TCAD tools. The metal gate electrode with different stress values（0 to—6 GPa） was implemented in the device simulation along with other traditional process-induced-strain（PIS） technologies like e-SiC and nitride capping *** MGS demonstrated a great enhancing effect on channel carriers transporting in the device as device pitch scaling *** addition,the novel structure for a tilted gate electrode was proposed and relationships between the tilt angle and channel stress were *** with a new method of fully stressed replacement metal gate（FSRMG） and using plane-shape-HfO to substitute U-shape-HfO,the effect of MGS was *** greater film stress in the metal gate,the process conditions for physical vapor deposition（PVD） TiN-x- were *** maximum compressive stress of—6.5 GPa TiN_x was achieved with thinner film and greater RF power as well as about 6 sccm N ratio.

摘要：为达到超低排放的环保要求,部分循环流化床(CFB)机组的选择性非催化还原(SNCR)系统需要过度喷氨调节,导致氨逃逸过高及尾部积灰堵塞。本文介绍了工程应用中降低还原剂耗量的3种方式,即炉内低氮燃烧、脱硝喷枪优化以及模型预测控制,以及这3种方式对应的运行策略和改造方向。针对现有技术的发展与不足,提出了基于气体组分分区的CFB污染物抑制新技术,该技术能够对CFB锅炉不同区域进行精准控制,结合CFB锅炉优化燃烧过程,深度抑制NO_(x)的原始生成,减少脱硝还原剂的消耗,且具有施工简单、投资少等优点,适用于新建机组及在役机组优化改造。