摘要：Mesa width （WM） is a key design parameter for SiC super junction （SJ） Schottky diodes （SBD） fabricated by the trench-etching-and-sidewall-implant method. This paper carries out a comprehensive investigation on how the mesa width design determines the device electrical performances and how it affects the degree of performance degradation induced by process variations. It is found that structures designed with narrower mesa widths can tolerant substantially larger charge imbalance for a given BV target, but have poor specific on-resistances. On the contrary, structures with wider mesa widths have superior on-state performances but their breakdown voltages are more sensitive to p-type doping variation. Medium WM structures （-2 p.m） exhibit stronger robustness against the process variation resulting from SiC deep trench etching. Devices with 2-p.m mesa width were fabricated and electrically characterized. The fabricated SiC SJ SBDs have achieved a breakdown voltage of 1350 V with a specific on-resistance as low as 0.98 mΩ***2. The estimated specific drift on- resistance by subtracting substrate resistance is well below the theoretical one-dimensional unipolar limit of SiC material. The robustness of the voltage blocking capability against trench dimension variations has also been experimentally verified for the proposed SiC SJ SBD devices.

摘要：针对当前加湿器调节便捷性和准确性不够的问题,设计了一种基于FPGA芯片的智能加湿器。通过将环境湿度采样周期、工作条件等代入预测系统,建立预测控制模型,再通过超声波加湿部件、温湿检测部件和FPGA控制部件,形成闭环反馈回路系统,FPGA控制部件根据湿度传感器数据,调节输出方波信号占空比,达到智能调节湿度的效果。系统仿真和实测结果表明,该系统湿度测量准确、稳定可靠、可扩展性强。