摘要：The optimizations to metal gate structure and film process were extensively investigated for great metalgate stress（MGS） in 20 nm high-k/metal-gate-last（HKVMG-last） nMOS *** characteristics of advanced MGS technologies on device performances were studied through a process and device simulation by TCAD tools. The metal gate electrode with different stress values（0 to—6 GPa） was implemented in the device simulation along with other traditional process-induced-strain（PIS） technologies like e-SiC and nitride capping *** MGS demonstrated a great enhancing effect on channel carriers transporting in the device as device pitch scaling *** addition,the novel structure for a tilted gate electrode was proposed and relationships between the tilt angle and channel stress were *** with a new method of fully stressed replacement metal gate（FSRMG） and using plane-shape-HfO to substitute U-shape-HfO,the effect of MGS was *** greater film stress in the metal gate,the process conditions for physical vapor deposition（PVD） TiN-x- were *** maximum compressive stress of—6.5 GPa TiN_x was achieved with thinner film and greater RF power as well as about 6 sccm N ratio.