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28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II
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《Circuits and Systems》2017年 第5期8卷 111-121页
作者:ali mohsen Adnan Harb Nathalie Deltimple Abraham SerhaneDepartment of Electrical and Electronics Engineering Lebanese International University Beirut Lebanon IMS Laboratory University of Bordeaux Talence Cedex France Department of Industrial Engineering Lebanese International University Beirut Lebanon 
This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor’s architecture is go...
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28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I
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《Circuits and Systems》2017年 第4期8卷 93-110页
作者:ali mohsen Adnan Harb Nathalie Deltimple Abraham SerhaneDepartment of Electrical and Electronics Engineering Lebanese International University Beirut Lebanon IMS Laboratory University of Bordeaux Talence cedex France Department of Industrial Engineering Lebanese International University Beirut Lebanon 
Nowadays, transistor technology is going toward the fully depleted architecture;the bulk transistors are becoming more complex in manufacturing as the transistor size is becoming smaller to achieve the high performanc...
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Design and development of a web-based 3D cadastral visualisation prototype
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《International Journal of Digital Earth》2015年 第7期8卷 538-557页
作者:Davood Shojaei Abbas Rajabifard mohsen Kalantari Ian D.Bishop ali AienDepartment of Infrastructure EngineeringCentre for Spatial Data Infrastructures and Land AdministrationThe University of MelbourneMelbourneAustralia 
Three-dimensional(3D)developments of land,such as complex high-rises,put enormous pressure on current land administration systems that have ad hoc approaches to 3D property *** approaches are unable to support effecti...
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