摘要：碱金属钼酸盐黄相在高放废液玻璃固化过程中难以处理,严重影响玻璃的化学稳定性。为了对高钼废液固化玻璃的化学稳定性进行较为准确的预判,从而加速配方研发进程,利用玻璃结构基因模拟法(GSg M)研究了高Mo (2.6%~3.3%,质量分数)模拟高放废液硼硅酸盐玻璃的化稳性和钼分相累积情况,建立了B、Li、Na、Mo浸出率、玻璃转变温度和钼分相累积程度的结构预测模型,并进行了模型验证。研究显示,在本工作的成分研究范围内,钼分相成分主要为CsLiMoO_(4)(水溶性黄相)及CaMoO_(4)(耐水性晶相)。成分–结构–性质关系表明,提高Li_(2)O和CaO会显著促进钼分相的形成。518~528 cm^(-1)Si—O—Si振动增强,则钼分相加剧,但[BO_(3)]基团中B—O—B振动增强,可有效减少钼分相的析出。模型验证结果表明,各性质的结构预测模型可对设计玻璃的化稳性及钼分相累积程度进行快速预测,以筛选设计玻璃配方是否有进一步研究的必要。

摘要：The optoelectronic properties of atomically thin transition metal dichalcogenides(TMDs)are largely influenced by defect populations(DPs).In this work,we fabricate WSmonolayers with different DPs by varying the fabrication methods and further reveal their distinct exciton-exciton ***-state photoluminescence(PL)experiments show that the monolayer with the lowest DP shows optimal PL intensity at low excitation power;however,it is overtaken and significantly surpassed by monolayers with higher DPs at high excitation ***-power-dependent experiments demonstrate that these monolayers exhibit distinct PL saturation behaviors with the threshold power differing by four orders of *** with in situ PL imaging and time-resolved PL experiments,we attribute such PL evolution discrepancies to the different DPs within these monolayers,which largely influence the exciton diffusion behavior and subsequently bring about distinct nonradiative exciton-exciton annihilations(EEAs).Valley polarization experiments are further employed to re-examine the DPs of these *** work reveals the distinct PL behaviors and underlying exciton dynamics in TMD monolayers with different DPs,which can largely facilitate the engineering of relevant high-performance devices for practical applications.

摘要：二维过渡金属硫族化合物(TMDCs)材料被认为是拓展摩尔定律的极具前景的候选材料.然而,该材料的低光致发光效率严重限制了其实际应用,其本质源于材料制备中不可避免引入的缺陷.在本文中,我们报道了一种Sr掺杂单层MoS_(2)的有效缺陷工程策略,该策略在实验上通过简便的化学气相沉积(CVD)一步法成功实现.所制备的具有亚毫米(~324μm)级的大尺寸样品的光致发光可实现高达两个数量级的增强,并伴随着载流子寿命的显著增强.这一现象主要归因于Sr掺杂后MoS_(2)体系中其三激子向激子转换.与此同时,掺杂样品的辐射质量和稳定性也显著提升.第一性原理计算进一步阐明了其调控机制,即在MoS_(2)中引入适当互补缺陷能级与其自身的缺陷能级协同,从而可调节其载流子组分,以实现光致发光的显著增强.此外,我们的缺陷工程策略也适用于其他掺杂剂,如钙掺杂剂.我们的工作报告了一种可以显著提升单层MoS_(2)的荧光性能的有效缺陷工程策略,这为设计和调控二维TMDCs的光电特性提供一种极具前途的方法.

摘要：The growth of data and Internet of Things challenges traditional hardware,which encounters efficiency and power issues owing to separate functional units for sensors,memory,and *** this study,we designed an a-phase indium selenide(a-In_(2)Se_(3))transistor,which is a two-dimensional ferroelectric semiconductor as the channel material,to create artificial optic-neural and electro-neural synapses,enabling cutting-edge processing-in-sensor(PIS)and computing-in-memory(CIM)*** an optic-neural synapse for low-level sensory processing,the a-In_(2)Se_(3)transistor exhibits a high photoresponsivity(2855 A/W)and detectivity(2.91×10^(14)Jones),facilitating efficient feature *** high-level processing tasks as an electro-neural synapse,it offers a fast program/erase speed of 40 ns/50μs and ultralow energy consumption of 0.37 aJ/*** AI vision system using a-In_(2)Se_(3)transistors has been *** achieved an impressive recognition accuracy of 92.63%within 12 epochs owing to the synergistic combination of the PIS and CIM *** study demonstrates the potential of the a-In_(2)Se_(3)transistor in future vision hardware,enhancing processing,power efficiency,and AI applications.

摘要：Hybrid perovskite possesses excellent photoelectric properties,including large light-absorption capacity and high carrier mobility,and is an ideal light-absorbing material for photoelectric *** grain size and compactness of hybrid perovskite are key factors affecting the performance of photoelectric *** photocurrent and photoresponsivity of these devices are relatively low because of the rapidly recombined photoexcited electron-hole pairs in hybrid ***,we develop a facile two-step chemical vapor deposition(CVD)method to synthesize a high-quality van der Waals(vd Ws)MAPb I3/graphene heterostructure for high-performance image *** introduced inorganic sources(PbI2)to vd Ws epitaxially grown Pb I2 film on a seamless graphene monolayer film template through *** iodide(MAI)was then reintroduced to prepare the vd Ws MAPb I3/graphene *** MAPb I3 layer is composed of densely packed,large-size grains and displays a smooth *** photoresponsivity of 107A/W is achieved in the corresponding *** by the human visual system,we designed a flexible photodetector array containing(24?24)pixels,achieving perfect image recognition and color *** study may greatly facilitate the construction of high-performance optoelectronic devices in artificial retina,biomedical imaging,remote sensing,and optical communication.

摘要：The newly emerged two-dimensional(2D) semiconducting materials, owning to the atomic thick nature and excellent optical and electrical properties, are considered as potential candidates to solve the bottlenecks of traditional semiconductors. However, the realization of high performance 2D semiconductorbased field-effect transistors(FETs) has been a longstanding challenge in 2D electronics, which is mainly ascribing to the presence of significant Schottky barrier(SB) at metal-semiconductor interfaces. Here, an additional contact gate is induced in 2D ambipolar FET to realize near ideal reconfigurable FET(RFET)devices without restrictions of SB. Benefitting from the consistently high doping of contact region, the effective SB height can be maintained at ultra-small value during all operation conditions, resulting in the near ideal subthreshold swing(SS) values(132 mV/decade for MoTe2 RFET and 67 mV/decade for WSe2 RFET) and the relatively high mobility(28.6 cm2/(Vs) for MoTe2 RFET and 89.8 cm2/(V s) for WSe2 RFET). Moreover, the flexible control on the doping polarity of contact region enables the remodeling and switching of the achieved unipolar FETs between p-type mode and n-type mode. Based on such reconfigurable behaviors, high gain complementary MoTe2 inverters are further realized. The findings in this work push forward the development of high-performance 2D semiconductor integrated devices and circuits.

摘要：具有高发光性能的二维材料被认为是实现光电器件应用的极具前途的材料.其中,硒化铟(InSe)是一种具有代表性的二维材料,近些年在光电领域表现出巨大的应用潜力,因此吸引了研究者们的广泛关注.然而,InSe的光-物质相互作用极其微弱,因为其带隙激子的偏振取向是面外的,主要被面外偏振光激发而对正常入射光(面内偏振)的响应极其微弱,这大大限制了其在光电器件中的实际应用.在此,我们提出了一种方法,即通过将少层InSe转移到Ag纳米棱镜阵列上,显著提升InSe在线性和非线性体系的光学响应.结合实验分析,增强的机理主要来自于两种机制的协同作用:一方面,局域表面等离子体共振产生的局部强化电磁场垂直分布于金属表面,与面外偏振的InSe带隙激子发生高效耦合,增强了InSe的光-物质相互作用;另一方面,独特设计的弯曲结构增加了入射光在平面外的偏振分量,促使InSe面外激子对光的吸收和散射效率增强.通过进一步调整InSe的厚度,我们实现了光致发光和二次谐波信号的两个数量级的增强.因此,我们的工作为改善InSe的光学特性提供了一个有效的途径,使其在光电器件的实际应用中迈出了重要的一步.