摘要：This study investigates the risks of non-conservative piping design according to ASME B31.1 for hightemperature piping subjected to long-term operation at high temperature in a creep regime based on a sensitivity analysis of the hold time. Design evaluations of hightemperature piping were conducted over a range of hold times in the creep regime according to ASME B31.1,which implicitly considers the creep effects, and the French high-temperature design code of the RCC-MRx, which explicitly considers the creep effects. Conservatisms were quantified among the codes in terms of the hold times. In the case of B31.1, the design evaluation results do not change depending on the hold time at high temperature,whereas in the case of RCC-MRx, they do. It was shown that the design limits of RCC-MRx were exceeded when the hold time exceeded certain values, whereas those of B31.1 were satisfied regardless of the hold times. Thus, the design evaluations according to B31.1 did not consistently yield conservative results and might lead to non-conservative results in the case of long-term operations in the creep range.

摘要：In photoelectrochemical （PEC） water splitting, charge separation and collection by the electric field in the photoactive material are the most important factors for improved conversion efficiency. Hence, ferroelectric oxides, in which electrons are the majority carriers, are considered promising photoanode materials because their high built-in potential, provided by their spontaneous polarization, can signifi＇canfly enhance the separation and drift of photogenerated carriers. In this regard, the PEC properties of BiFeO3 thin-film photoanodes with different crystallographic orientations and consequent ferroelectric domain structures are investigated. As the crystallographic orientation changes from （001）pc via （ll0）pc to （lll）p~, the ferroelastic domains in epitaxial BiFeO3 thin films become mono-variant and the spontaneous polarization levels increase to 110 btC/cm2. Consequent136 the photocurrent density at 0 V vs. Ag/AgC1 increases approximately 5.3-fold and the onset potential decreases by 0.180 V in the downward polarization state. It is further demonstrated that ferroelectric switching in the （lll）pc BiFeO3 thin-film photoanode leads to an approximate change of 8,000% in the photocurrent density and a 0.330 V shift in the onset potential. This study strongly suggests that domain-engineered ferroelectric materials can be used as effective charge separation and collection layers for efficient solar water-splitting photoanodes.