摘要：Over the past few years, three photorespiratory bypasses have been introduced into plants, two of which led to observable in creases in photos yn thesis and biomass yield. However, most of the experiments were carried out using Arabidopsis under controlled environmental conditions, and the increases were only observed under low-light and short-day conditions. In this study, we designed a new photorespiratory bypass (called GOC bypass), characterized by no reducing equivalents being produced during a complete oxidation of glycolate into CO2 catalyzed by three rice-self-originating enzymes, i.e., glycolate oxidase, oxalate oxidase, and catalase. We successfully established this bypass in rice chloroplasts using a multi-gene assembly and transformation system. Transgenic rice plants carrying GOC bypass (GOC plants) showed significant increases in photosynthesis efficiency, biomass yield, and nitrogen content, as well as several other CO2-enriched phe no types under both greenhouse and field conditions .Grain yield of GOC plants varied depending on seeding season and was increased significantly in the spring. We further demonstrated that GOC plants had significant advantages under high-light conditions and that the improvements in GOC plants resulted primarily from a photosynthetic CO2-concentrating effect rather than from improved energy balance. Taken together, our results reveal that engineering a newly designed chloroplastic photorespiratory bypass could increase photosynthetic efficiency and yield of rice plants grown in field conditions, particularly under high light.

摘要：According to the parameters and applications of laser diode （LD）, three protection circuits were designed： the time-delay soft-start protection circuit, the power-on impulse protection circuit and the limit-current protection circuit. In this article, the structure and the principle of every protection circuit have been detailed. From several tests and feedbacks from customers, the expected goals have been completed.

摘要：小尺寸单轴应变Si p型金属氧化物半导体(PMOS)沟道反型层迁移率与晶面/晶向密切相关,应变PMOS优化设计时应合理选择沟道的晶面/晶向.目前,文献已有1.5 GPa应力强度下单轴应变Si PMOS沟道反型层迁移率按晶面/晶向排序的理论模型.然而,在器件实际制造过程中,覆盖SiN应力膜工艺是固定的,由于沟道弹性劲度系数具有各向异性,这样,不同晶面/晶向应变PMOS沟道所受应力强度不同,进而导致在实际工艺下沟道反型层迁移率晶面/晶向排序理论模型"失效".针对该问题,本文采用中国科学院微电子研究所40 nm工艺流程制备了不同晶面/晶向40 nm沟道小尺寸单轴应变Si PMOS与未应变Si PMOS,并通过器件转移特性测试,获得了小尺寸单轴应变Si PMOS反型层迁移率晶面/晶向排序结论.此有关小尺寸单轴应变Si PMOS沟道反型层迁移率晶面/晶向排序的相关结论,由于考虑了工艺实现因素,与文献理论预测排序结果相比,更适于指导实际器件制造;相关分析方法也可为其他应变材料沟道MOS相关问题的解决提供重要技术参考.

摘要：研制出一种新型弯曲旋转超声波马达。其定子由一个实心金属柱和粘贴在其上的压电陶瓷片组成。分析了该超声波马达的运动机理,针对新加坡学者所作推导的局限性,根据梁的弹性振动理论,推导出一端固定一端自由的定子在相位差为90°的两个交变电压激励时其端部质点的运动轨迹方程;分析了该马达的定子和转子间接触锥形角的计算方法,为柱形弯曲旋转超声波马达的设计提供了理论指导。

摘要：结合CDIO国际工程教育模式,从本校实际出发,以培养具有创新能力和实践能力的高素质工程技术人才为目标,通过化工实训基地建设、实训内容改革与项目设计、成绩评价体系等层面,构筑了包括化工实训、化工仿真、化工认识实习、化工生产实习、化工毕业设计在内的多层次的实践教学体系,对化学工程与工艺专业学生的工程实践能力、创新意识和团队意识培养具有较强的指导意义。

摘要：本文分析了SDH(synchronousdigitalhierarchy)中复用段适配功能 (MSAFunction)模块的输入、输出数据流的波动并由此对两种可实现的方案进行了比较 ,并作出相应的选择。使用所选方案设计的MSA功能专用集成电路设计已经通过了验证 ,达到了ITU T所要求的逻辑功能。

摘要：温控系统设计的优劣直接影响着铝基覆铜板导热系数测试平台的测量准确性。但其数学模型建立难,受控调节器件多,对该系统的设计提出了很高的要求。分析常规PID控制效果不佳的同时,针对该温控系统非线性、小时滞的特点,结合Q-leaming的扩张寻优策略与Metropolis的动作选择准则,提出基于Q-leaming(Metropolis准则下)的PID控制算法(简称Qm-PID)。与已有控制方法仿真对比后发现,该方法超调小、调节快、精度高、可行性大,为PID控制方法的延伸提供了一定程度的借鉴意义。

摘要：针对螺旋锥齿轮网络化闭环制造中信息集成统一管理的需求,构建了螺旋锥齿轮网络化闭环制造集成系统架构,建立了螺旋锥齿轮网络化闭环制造集成系统的运行模式,基于分层设计思想开发了螺旋锥齿轮网络化闭环制造集成系统,并通过螺旋锥齿轮的网络化闭环制造应用试验,验证了该集成系统框架的可行性和实用性。该集成系统框架为螺旋锥齿轮的网络化闭环制造奠定了信息管理基础。

摘要：利用自主设计的拉矫机对热轧带钢施加不同的压下量或张紧力进行拉矫破鳞试验,使试验钢表面获得不同的应力状态,观察了破鳞前后氧化皮/基体的界面形貌;采用拉伸试验研究了不同应力状态下氧化皮/基体界面的结合强度;采用电位导数首零方法对试验钢进行酸洗试验,研究了应力状态对酸洗速率的影响。结果表明:不论是拉应力还是压应力,随着应力值的增大,氧化皮的全剥落率不断增大,且压应力时的全剥落效果好于拉应力时的,最终受压应力面和受拉应力面氧化皮的全剥落率稳定值分别为24.1%和6.3%;当全剥落率相同或相近时,拉应力对氧化皮/基体结合强度的降低效果和对酸洗速率的提升效果都好于压应力的;当压下量相同或相近时,压应力对酸洗速率的提升效果好于拉应力的。

摘要：基于针—网放电结构,设计了一种新型的辉光放电装置,并研究了放电针数量、针间距、放电间距和载气流速等因素对放电稳定性、起辉电压、放电功率及放电能量密度的影响。实验表明:载气流可带走放电产生的不均匀热量,使得放电更加稳定;电极间距越小,起辉电压越低,越容易向火花放电过渡;针间距越大,单针的放电功率也越大。放电能量密度不仅受针间距的影响,还受到放电针数量的影响。