摘要：This work is about the development of a super low noise amplifier with minimum power consumption and high gain for several wireless *** amplifier operates at frequency bands of 0.9-2.4 GHz and can be used in many applications like Wireless local area network(WLAN),WiFi,Bluetooth,ZigBee and Global System for mobile communications(GSM).This new design can be employed for the IEEE 802.15.4 standard in industrial,scientific and medical(ISM) *** enhancement mode pseudomorphic high electron mobility transistor PHEMT is used here due to its high linearity,better performance and less noisy *** common source inductive degeneration method is employed here to enhance the gain of *** amplifier produces a gain of more than 17 dB and noise figure of about 0.5 *** lower values of S11 and S22 reflect the accuracy of impedance matching network placed at the input and output sides of *** Advance Design System(ADS) is used for the design and simulation *** the layout of design is developed on the FR4 substrate.