摘要：For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor （RTHEMT） on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor （HEMT） and a resonant tunneling diode （RTD） are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valtey current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current-voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure.