摘要：Rare-earth orthoferrite SmFeO3 is an outstanding single-phase multiferroic material,holding great potential in novel low-power electronic ***,simultaneous magnetic and ferroelectric orders as well as magnetoelectric(ME)coupling effect at room temperature(RT)in this system have not been demonstrated *** this study,epitaxial SmFeO3 films were successfully prepared onto tensile-strain Nb-SrTiO3(Nb-STO)substrates by a pulsed laser deposition(PLD)*** results show that the films exhibit obvious ferromagnetic and ferroelectric orders at ***,the magnetic anisotropy gradually changes from out-of-plane(OP)to in-plane(IP)direction with increasing film thickness,which is attributed to the variations of O 2p-Fe 3d hybridization intensity and Fe 3d-orbit occupancy caused by the strain-relaxed ***,electrically driven reversible magnetic switching further proves that the SmFeO3 films exhibit the RT ME coupling effect,suggesting promising applications in new-generation electric-write magnetic-read data storage devices.

摘要：Controlling the polar order in ferroelectric materials may enrich the diversity of their property and functionality,offering new opportunities for the design of novel electronic and optoelectronic *** this paper,we report a planar multi-state memory device built upon a twodimensional(2D)van der Waals layered ferroelectric material,2Hα-In_(2)Se_(3).Three(high,median and low)resistance states are demonstrated to be interconvertible in this device with a fast switching speed,excellent endurance and retention performances via the modulation of the polar order of the ferroelectricα-In_(2)Se_(3) layers under an in-plane electric ***,reversible switching between the median-resistance state and the low-resistance state can be achieved by an ultralow electric field of 1-2 orders of magnitude smaller than the reported values in other 2D ferroelectric materialbased memory ***,the three different polar order states are discovered to exhibit distinctive *** results demonstrate great potentials ofα-In_(2)Se_(3)in nonvolatile high-density memory and advanced optoelectronic device applications.