摘要：Two silicon-based ultraviolet （UV） and blue-extended photodiodes are presented, which were fabricated for light detection in the ultraviolet/blue spectral range. Stripe-shaped and octagon-ring-shaped structures were designed to verify parameters of the UV-responsivity, UV-selectivity, breakdown voltage, and response time. The ultra-shallow lateral pn junction had been successfully realized in a standard 0.5-μm complementary metal oxide semiconductor （CMOS） process to enlarge the pn junction area, enhance the absorption of UV light, and improve the responsivity and quantum efficiency. The test results illustrated that the stripe-shaped structure has the lower breakdown voltage, higher UV-responsicity, and higher UV-selectivity. But the octagon-ring-shaped structure has the lower dark current. The response time of both structures was almost the same.

摘要：The input/output(I/O)pins of an industry-level fluorescent optical fiber temperature sensor readout circuit need on-chip integrated high-performance electro-static discharge(ESD)protection *** is difficult for the failure level of basic N-type buried layer gate-controlled silicon controlled rectifier(NBL-GCSCR)manufactured by the 0.18µm standard bipolar-CMOS-DMOS(BCD)process to meet this ***,we propose an on-chip integrated novel deep N-well gate-controlled SCR(DNW-GCSCR)with a high failure level to effectively solve the problems based on the same semiconductor *** computer-aided design(TCAD)simulation is used to analyze the device *** are tested by transmission line pulses(TLP)to obtain accurate ESD *** holding voltage(24.03 V)of NBL-GCSCR with the longitudinal bipolar junction transistor(BJT)path is significantly higher than the holding voltage(5.15 V)of DNW-GCSCR with the lateral SCR path of the same ***,the failure current of the NBL-GCSCR device is 1.71 A,and the failure current of the DNW-GCSCR device is 20.99 *** the gate size of DNW-GCSCR is increased from 2µm to 6µm,the holding voltage is increased from 3.50 V to 8.38 *** optimized DNW-GCSCR(6µm)can be stably applied on target readout circuits for on-chip electrostatic discharge protection.

摘要：A composite ultraviolet （UV）/blue photode- tector structure has been proposed, which is composed of P-type silicon substrate, Pwelb Nwell and N-channel metal- oxide-semiconductor field-effect transistor （NMOSFET） realized in the PweH. In this photodetector, lateral ring- shaped Pwell-Nwell junction was used to separate the photogenerated carriers, and non-equilibrium excess hole was injected to the Pwell bulk for changing the bulk potential and shifting the NMOSFET＇s threshold voltage as well as the output drain current. By technology computer-aided design （TCAD） device, simulation and analysis of this proposed photodetector were carried out. Simulation results show that the combined photodetector has enhanced responsivity to UV/blue spectrum. More- over, it exhibits very high sensitivity to weak and especially ultral-weak optical light. A sensitivity of 7000 A/W was obtained when an incident optical power of 0.01 μW was illuminated to the photodetector, which is 35000 times higher than the responsivity of a conventional silicon-based UV photodiode （usually is about 0.2 A/W）. As a result, this proposed combined photodetector has great potential values for UV applications.

摘要：基于反射光强度和深度二维变量的含加性权值B样条曲面误差拟合被用于校正由目标场景的低反射率或长距离引起的弱光强度相关深度误差。与传统的B样条曲面误差拟合相比,改进的模型使用权值参数优化每个曲面片的部分控制点,获得了更精确的误差拟合曲面片,使得平均校正误差小于2 mm,精度提高了近2倍。此外,为克服乘性权值矩阵无法通过最小二乘法获取的难题,对每个控制点添加加性权值参数,实现相机参数校准过程中一次性求得控制点参数矩阵和加性权值参数矩阵。同时,考虑到谐波相关误差也与深度相关,将谐波相关误差的校正统一到校正方法中。

摘要：随着科学技术的不断发展,单光子雪崩光电二极管(SPAD)在极弱光探测领域起着不可或缺的作用。但是,在需要同时进行可见光和红外光的应用场景下,单一波峰响应的SPAD往往独木难支,而采用多个单波峰器件又降低了整个系统的集成度。为解决这一问题,设计了一种分别在可见光区和红外光区响应的双波峰SPAD。为确保该器件能实现预期的功能,首先利用半导体工艺器件仿真软件(TCAD)来验证该器件的合理性,再通过搭建外部淬灭电路来测试SPAD的各项性能参数。测试结果显示,该器件的雪崩击穿电压为12.75 V。在22℃的室温条件下(过偏压为0.5 V),SPAD的光子探测概率在520 nm处达到32%,在840 nm处达到12%。此外,当过偏压为1 V时,其暗计数率(DCR)为1 kHz。因此,该SPAD能够实现对可见光及近红外光的双波峰探测,并且将DCR控制在一个较低的范围内。

摘要：单光子雪崩二极管(SPAD)可以检测到异常微弱的光信号,可广泛应用于目标跟踪、自动驾驶、荧光检测等领域。本文基于180 nm标准双极-互补金属氧化物半导体-双扩散金属氧化物半导体(BCD)工艺,设计了一种低过偏压下具有高光子检测概率(PDP)的SPAD器件。该器件在440~740 nm范围内具有良好的光谱响应。采用半径为10μm的N+/P阱形成PN结作为感光区域,由N阱形成一个能有效防止边缘击穿的保护环。应用计算机技术辅助设计(TCAD)软件对SPAD的基本工作原理进行了定性分析,并通过建立的测试平台获得了设备的实际电气参数。测试结果表明,在1 V的过量偏置电压下,在480~660 nm的波长范围内,该器件可达到30%以上的PDP。在560 nm时,PDP峰值为42.7%,暗计数率为11.5 Hz/μm^(2)。最后通过设计VerilogA混合模型验证了器件的模拟结果和实测结果之间具有良好一致性。

摘要：利用光生伏特效应设计一种新型的光控双向栅极可控硅晶闸管(LDGSCR)防护器件,研究光照对静电放电(ESD)维持窗口的调控作用。使用光生电流来模拟光照控制ESD设计窗口的物理效应,实现一种光控器件的可控硅晶闸管(SCR)宏观模型。在1.5 V的电压模拟光照下,该模型的维持电流相比无光条件增加35 mA,表明使用光照来调整ESD的维持窗口可以降低被保护电路发生闩锁的风险。采用0.18μm BCD工艺制造LDGSCR器件并进行测试,测试结果与模型仿真结果之间的最大误差仅为0.09 V和0.004 A。验证表明,该宏观模型可以消除传统耦合晶体管电路模型中存在的收敛性问题,极大减少开发光控SCR器件新型结构所需的时间和精力。

摘要：基于半导体工艺器件仿真软件和Matlab编程,对光子探测概率(PDP)进行了建模和实验表征。进一步考虑器件表面二氧化硅薄膜的光透射性,可以准确预测单光子雪崩二极管(SPAD)的性能。将模拟结果与采用0.18μm标准双极-互补金属氧化物半导体-双重扩散金属氧化物半导体(BCD)工艺设计和加工的SPAD的结果进行比较。结果显示,PDP的预测结果与实验结果之间具有良好的一致性,平均误差为1.72%。该模型可以减少商用器件仿真软件中存在的不收敛问题,极大减少了开发SPAD器件新结构所需的时间和成本。

摘要：结合3D-TOF(Time of flight)图像传感器的特点与应用背景,以德国PMD Tec的一种TOF芯片-PMD PhotoICs?19K-S3为例阐述TOF传感器的工作原理并分析其驱动时序。以Xilinx公司的FPGA为开发平台,用Verilog完成驱动时序的设计并进行仿真。经过验证,上位机能够正确显示出传感器采集到的深度(Depth)数据。

摘要：设计了一款应用于MEMS麦克风的电荷泵电路。在动态的电荷传输开关型电荷泵中,增加了时钟电平倍增电路和负反馈电路,使得电荷泵在工艺偏差、温度以及电源电压变化时能够输出稳定的高压。电路基于0.3μm CMOS工艺实现,Spectre仿真结果表明,在1.6-3.6V电源电压范围及所有工艺角下,电荷泵能够输出偏差在±5%以内的14V高压,与相同条件下的传统静态电荷传输型电荷泵相比,升压单元减少了33%,有效提高了效率,节省了面积。