摘要：A new linac injector CSR-LINAC for the Cooler Storage Ring of the Heavy Ion Research Facility in Lanzhou(HIRFL-CSR) is proposed to improve the performance of the HIRFL. As a key component of the CSRLINAC, the 108.48-MHz radio frequency quadrupole(RFQ) is under design at the Institute of Modern *** ions with mass-to-charge ratios of 3–7 will be accelerated from 4 to 300 keV/u by the RFQ. In the beam dynamics design, the New Four-Section Procedure is adopted to improve the transmission efficiency and obtain a compact structure. In this paper, a transmission efficiency of 98.0% in the 3.07-m-long cavity was obtained. The Interdigital H-type structure is employed because of its mechanical stability and high shunt impedance. The RF performance of the cavity is investigated by the electromagnetic simulation. The optimized results of the electric field to meet the beam dynamics requirements are presented in this paper.

摘要：　根据引江济汉工程渠道引水防沙的设计要求,在收集基本水文泥沙和工程基础资料的基础上,运用一维恒定流非均匀沙数学模型,研究了不设沉沙池和设沉沙池后引水渠道内泥沙淤积情况,模型计算结果可以为引江济汉工程中渠道引水防沙设计提供依据。

摘要：重力扰动已经成为高精度长航时惯导系统的主要误差源之一。针对船用高精度惯导系统的重力扰动抑制问题,从舰船INS误差模型出发,推导了重力扰动在惯导系统中的传播特性。仿真结果表明垂线偏差将引起系统较大的舒拉振荡误差。为抑制重力扰动对系统的影响,引入常速度误差反馈阻尼网络和相位超前串联阻尼网络。分析了重力扰动在水平阻尼网络中的传递特性,实现了相应滤波器的设计。在此基础上完成了实验验证,海上试验结果表明,所引入的两种阻尼网络都能够阻尼掉重力扰动引起的舒拉振荡型导航误差,其中,相位超前串联阻尼网络效果更优,抑制率达到70%以上。

摘要：海南东方电厂濒临北部湾,受波浪、潮流作用,水沙运动复杂。针对工程特殊地理位置和自然条件,建立北部湾海区波浪与潮流共同作用下的平面二维泥沙数学模型,对海南东方电厂取、排水口的泥沙问题进行了研究,研究结果可以为工程方案设计及运行维护提供依据。

摘要：针对某型爆炸螺栓在总体使用时出现冲击过高的问题,通过更改其连接方式及增加缓冲材料的方法进行了降冲击设计,并对不同缓冲材料进行试验研究。结果表明:在相同尺寸和一定的压缩空间下,泡沫铝的缓冲效果最明显,测点位置处时域冲击响应峰值分别由原来的7 335g和13 640g降到了707.9g和4 172g。

摘要：树脂渗透陶瓷(PICN)复合材料是一种由树脂和陶瓷2种互穿网状相构成的新型牙科修复材料,具有优良的天然牙仿生性能和易加工性,特别适用于基于椅旁计算机辅助设计和制造技术的快速牙体缺失和缺损的修复,正逐渐成为研究和应用的热点。PICN的力学性能和美学性能等可通过成分设计、优化制备工艺和表面改性等来调控。本文综述了PICN材料制备的研究进展,详述了多孔陶瓷制备、树脂渗透和固化工艺等方面研究现状,展望了未来发展趋势和研究重点。

摘要：The feature extraction algorithm plays an important role in face recognition. However, the extracted features also have overlapping discriminant information. A property of the statistical uncorrelated criterion is that it eliminates the redundancy among the extracted discriminant features, while many algorithms generally ignore this property. In this paper, we introduce a novel feature extraction method called local uncorrelated local discriminant embedding(LULDE). The proposed approach can be seen as an extension of a local discriminant embedding(LDE)framework in three ways. First, a new local statistical uncorrelated criterion is proposed, which effectively captures the local information of interclass and intraclass. Second, we reconstruct the affinity matrices of an intrinsic graph and a penalty graph, which are mentioned in LDE to enhance the discriminant property. Finally, it overcomes the small-sample-size problem without using principal component analysis to preprocess the original data, which avoids losing some discriminant information. Experimental results on Yale, ORL, Extended Yale B, and FERET databases demonstrate that LULDE outperforms LDE and other representative uncorrelated feature extraction methods.

摘要：为准确分析舰船声隐身性能的优劣,针对舰船噪声频带级限值线的平折线模型和三点参数模型,推导了在不同噪声控制点参数条件下舰船总声级的频域表达式,以此为基础对舰船噪声源级进行了定量计算,通过数值仿真给出了舰船噪声水平与噪声控制点谱级、控制频点之间的变化规律,并从水声探测的角度出发,研究了舰船噪声频带级限值线模型、声呐品质因素和声呐探测距离之间的依赖关系,分析评价了舰船噪声频带级限值线模型的声隐身性能,以期为舰船的噪声控制方案设计与改进提供依据。

摘要：目的探讨虫草素(cordycepin,COR)减轻庆大霉素(gentamicin,GEN)肾毒性的作用及其抑制GEN诱导的氧化应激和细胞铁死亡的分子机制。方法将SD大鼠分为对照组、GEN组与GEN+COR组3组,动物模型构建成功后,检测各组大鼠血清肌酐和尿素氮水平,HE染色评价肾脏组织损伤程度。另外,检测各组SD大鼠肾脏组织中丙二醛和谷胱甘肽含量,并通过Western blot的方法分析细胞铁死亡标志蛋白GPX4、SLC7A11表达。结果与对照组相比,GEN组大鼠血清肌酐、尿素氮明显升高(P<0.01),同时给予50 mg·kg-1 COR后有效降低肌酐与尿素氮水平,HE结果也显示COR能够缓解GEN造成的肾脏组织损伤;COR可逆转GEN造成的大鼠肾脏组织中丙二醛水平升高与谷胱甘肽水平下降。同时,COR能够恢复GEN诱导的GPX4、SLC7A11蛋白水平下降。结论COR能够通过减轻细胞氧化应激与铁死亡缓解GEN造成的肾损伤。

摘要：A 1200-V thin-silicon-layer p-channel silicon-on-insulator(SOI)lateral double-diffused metal-oxide-semiconductor(LDMOS)transistor is *** device named INI SOI p-LDMOS is characterized by a series of equidistant high concentration n+islands inserted at the interface of a top silicon layer and a buried oxide ***−mode holes,caused by the electric potential dispersion between the device surface and the substrate,are located in the spacing between two neighboring n+islands,and greatly enhance the electric field of the buried oxide layer and therefore,effectively increase the device breakdown *** on a 2−µm−thick buried oxide layer and a 1.5-µm−thick top silicon layer,a breakdown voltage of 1224 V is obtained,resulting in the high electric field(608 V/µm)of the buried oxide layer.