摘要：Since single event transient pulse quenching can reduce the SET(single event transient) pulsewidths effectively,the charge collected by passive device should be maximized in order to minimize the propagated *** the perspective of the layout and circuit design,the SET pulsewidths can be greatly inhibited by minimizing the layout spacing and signal propagation delay,which sheds new light on the radiation-hardened ICs(integrated circuits) *** show that the SET pulsewidths of propagation are not in direct proportion to the LET(linear energy transfer) of incident particles,thus the defining of the LET threshold should be noted when SET/SEU(single event upset) occurs for the radiation-hardened *** capability of anti-radiation meets the demand when LET is high but some soft errors may occur when LET is ***,radiation experiments should be focused on evaluating the LET that demonstrates the worst response to the circuit.

摘要：Using Technology Computer-Aided Design(TCAD) 3-D simulation,the single event effect(SEE) of 25 nm raised source-drain FinFET is *** on the calibrated 3-D models by process simulation,it is found that the amount of charge collected increases linearly as the linear energy transfer(LET) increases for both n-type and p-type FinFET hits,but the single event transient(SET) pulse width is not linear with the incidence LET and the increasing rate will gradually reduce as the LET *** impacts of wafer thickness on the charge collection are also analyzed,and it is shown that a larger thickness can bring about stronger charge *** reducing the wafer thickness could mitigate the SET effect for FinFET technology.

摘要：Using Geant4 Monte Carlo code and Technology Computer-Aided Design(TCAD) simulation,energy deposition and charge collection of single event effects(SEE) are studied,which are induced by low-energy protons and α particles in small feature size *** analyzed charge collection of SEE especially at Bragg's peak and obtained two types of deposited energy distributions of protons and α particles at different incident *** two components of the total charge collected are quantified,which are due to drift current of the space charge region and current in the funnel region *** explain the high soft error rate in experiments of low energy proton.

摘要：研究了影响SEL敏感性的关键因素。针对180nm体硅工艺,基于校准的CMOS反相器器件模型,使用器件模拟的方法,研究了粒子入射位置、温度、阱/衬底接触位置、NMOS与PMOS间距等因素对SEL敏感性的影响。模拟和分析表明,CMOS电路不同位置的闩锁响应差别很大,找出了电路发生闩锁的敏感区域,得出了温度、阱/衬底接触的位置、NMOS与PMOS间距等因素与SEL敏感性之间的关系,并从理论上进行了解释,总结了降低单粒子闩锁效应的有效方法,研究结果能为深亚微米体硅工艺下的抗SEL加固设计提供有效的指导。

摘要：DICE单元是一种有效的SEU加固方法,但是,基于DICE单元的SRAM在读写过程中发生的SEU失效以及其外围电路中发生的失效,仍然是加固SRAM中的薄弱环节。针对这些问题,提出了分离位线结构以解决DICE单元读写过程中的翻转问题,并采用双模冗余的锁存器加固方法解决外围电路的SEU问题。模拟表明本文的方法能够有效弥补传统的基于DICE单元的SRAM的不足。

摘要：利用第一性原理的计算方法,研究了A-Z-A型GNR-FET的电子结构和输运性质及其分子吸附效应.得到了以下结论:纯净的A-Z-A型GNR-FET具有典型的双极型晶体管特性,吸附分子的存在会使纳米带能隙变小.对于吸附H,H_2,H_2O,N_2,NO,NO_2,O_2,CO_2和SO_2分子的情况,A-Z-A型GNR-FET仍然保持着场效应晶体管的基本特征,但吸附不同类型的分子会使GNR-FET的输运特性发生不同程度的改变;对于吸附OH分子的情况,输运特性发生了本质的改变,完全不具有场效应晶体管的特性.这些研究结果将有助于石墨烯气体探测器的工程实现,并对应用于不同环境巾GNR-FET的设计具有重要指导意义.

摘要：本文研究了负偏置温度不稳定性(NBTI)对单粒子瞬态(SET)脉冲产生与传播过程的影响.研究结果表明:NBTI能够导致SET脉冲在产生与传播的过程中随时间而不断展宽.本文还基于工艺计算机辅助设计模拟软件(TCAD)进行器件模拟,提出了一种在130nm体硅工艺下,计算SET脉冲宽度的解析模型,并结合NBTI阈值电压退化的解析模型,建立了预测SET脉冲宽度在产生的过程中随PMOS器件的NBTI退化而不断展宽的解析模型,TCAD器件模拟的结果与解析模型的预测一致;本文还进一步建立了预测SET脉冲宽度在传播的过程中随PMOS器件的NBTI退化而不断展宽的解析模型,SPICE电路模拟的结果与解析模型所预测的结论一致.