摘要：A gallium nitride(GaN)power amplifier monolithic microwave integrated circuit(MMIC)with a wide band and high efficiency in the microwave frequency band is proposed in this *** power amplifier MMIC uses a 0.15^im GaN high electron mo-bility transistor(HEMT)*** operating frequency band of the amplifier can cover the whole K-band,i.e.,17-26.5 GHz.

摘要：In this paper, the design of a 9.1 GHz Low Noise amplifier (LNA) of a RADAR receiver that is used in the Navy is presented. For the design of the LNA, we used GaAs Field-Effect Transistors (FETs) from Agilent ADS component library. In order to keep the cost of the circuit in low prices and the performance high, we design a two-stage LNA.

摘要：amplifiers are essential building blocks of a majority of the mixed signal circuits that are used in the development of cognitive computing architectures. Their implementation and use is challenged by the second order effects that dominate the MOSFET operations with reduction in the technology size and scale. The ability to program the amplifiers once fabricated becomes an even more challenging problem as it warrants the use of multiple circuit components that lowers circuit performance and in turn outweighs the advantages of generalisation abilities. In this paper, a reconfigurable set of amplifier circuits are proposed based on quantised conductance devices in combination with MOSFET devices. The presented circuits form the basic configurations for the memristor based amplifiers, and show promising performance results in terms of power dissipation, on-chip area and THD values.

摘要：To miniaturize a very low level dc current amplifier and to improve its output response speed, the switched capacitor negative feedback circuit (SCNF), instead of the conventionally used high-ohmage resistor, is presented in this paper. In our system, a switched capacitor filter (SCF) and an offset controller are also used to decrease vibrations and offset voltage at the output of the amplifier using SCNF. The theoretical output voltage of the very low level dc current amplifier using SCNF is obtained. The experimental results show that the unnecessary components of the amplifier’s output are much decreased, and that the response speed of the amplifier with both the SCNF and SCF is faster than that using high-ohmage resistor.

摘要：This paper presents a different approach of Intermediate Frequency (IF) amplifier using 0.18 μm MIETEC technology channel length of MOSFET Darlington transistors. In contrast to Bipolar conventional Darlingtonpair, a MOSFET Darlington configuration is employed to reduce supply voltage (VDD) and DC consumption power (Pc). The frequency response parameters of the proposed design such as bandwidth, gain bandwidth product, input/output noises and noise figure (NF) are improved in proposed (IF) amplifier. Moreover, a dual-input and dual-output (DIDO) IF amplifier constructed from two symmetrical single input and single output (SISO) (IF) amplifier is proposed too. The idea is to achieve improved bandwidth, and flat response, because these parameters are very important in high frequency applications. Simulation results that obtained by P-SPICE program are 1.2 GHz Bandwidth (BW), 3.4 GHz (gain bandwidth product), 0.5 mW DC consumption power (Pc) and the low total output noise is 12 nV with 1.2 V single supply voltage.

摘要：With the rapid development of integrated circuits [1], low power consumption has become a constant pursuiting goal of the designer in chip design. As the memory almost takes up the area of the chip, reducing memory power consumption will significantly reduce the overall power consumption of the chip;according to ISSCC’s 2014 report about technology trends discussions, there two points of the super-low power SRAM design: 1) design a more effective static and dynamic power control circuit for each key module of SRAM;2) ensure that in the case of the very low VDD min, SRAM can operating reliably and stably. This paper makes full use reliable of 8T cell, and the single-port sense amplifier has solved problems in the traditional 8T cell structure, making the new structure of the memory at a greater depth still maintain good performance and lower power consumption. Compared with the designed SRAM the SRAM generated by commercial compiler, as the performance loss at SS corner does not exceed 10%, the whole power consumption could be reduced by 54.2%, which can achieve a very good effect of low-power design.

摘要：吉他放大器怎么能说是吉他的一部分呢?这完全是另外一样东西啊!——大概有些人会有这样的想法。但是从电吉他的整个系统来看,放大器就是吉他的一部分。它是电吉他的发声部分,没有它的话,也许你根本就听不到自己到底弹了些什么。有的吉他设计了自带放大器,也就是在琴身上安装了放大系统和喇叭,这样看起来他们就像是一个整体了。放大器的作用是把拾音器拾取的声音信号进行放大,这样我们才能听见,才能被这巨大的音量震撼。

摘要：With a lot of millimeter-wave(mm-Wave)applications being issued,wideband circuits and systems have attracted much attention because of their strong applicability and *** this paper,four transformer-based ultra-wideband mm-Wave circuits demonstrated in CMOS technologies are reviewed from theoretical analysis,implementation,to ***,we introduce a mm-Wave low-noise amplifier with transformer-based Gm-boosting and pole-tuning *** achieves wide operating bandwidth,low noise figure,and good gain ***,we review an injection-current-boosting technique which can significantly increase the locking range of mm-Wave injection-locked frequency *** on the injectionlocked principle,we also discuss an ultra-wideband mm-Wave divider with the transformer-based high-order ***,an E-band up-conversion mixer is presented;using the two-path transconductance stage and transformer-based load,it obtains good linearity and a large operating band.

摘要：A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control on HD3) . In this paper, a detailed design and analysis is presented for a transconductor made using this biasing technique. The transconductor, in addition, is made to offer high Gm, low power dissipation and is designed for linearly tunable Gm with current mode load as one of the applications. The circuit exhibits HD3) of less than –43.7 dB, high current efficiency of 1.18 V-1 and Gm of 390 μS at 1 VGp-p @ 50 MHz. UMC 0.18 μm CMOS process technology is used for simulation at supply voltage of 1.8 V.

摘要：This paper presents the design of a low power LNA with second stage that uses a notch filter for DS-UWB application. The LNA employs a current reuse structure to reduce the power consumption and an active second order notch filter to produce band rejection in the 5 - 6 GHz frequency band. The input reflection coefficient S11 and output reflection S22 are both less than –10 dB. The maximum power gain S21 is 15 dB while the maximum rejection ratio is over –10 dB at 4.8 GHz. The minimum noise figure is 5 dB. The input referred third-order intercept point (IIP3) is –7 dBm at 6 GHz. The power consumption is 6.4 mW from a 1-V power supply.