摘要：A new strategy of thermally activated delayed fluorescence(TADF)material-sensitized circularly polarized luminescence(CPL)has been proposed for improving the efficiencies of fluorescent circularly polarized organic lightemitting diodes(OLEDs)(CP-OLEDs).Consequently,a pair of helicene enantiomers,(P)-HAI and(M)-HAI,were *** helicene enantiomers with the rigid helicalπ-skeleton had highly thermal and enantiomeric stabilities,and they also showed excellent photophysical properties,especially,intense mirror-image CPL activities with large luminescence dissymmetry factor(|g_(lum)|)values of about 6×10^(-3).Notably,the CP-OLEDs with the helicene enantiomers as emitters and a TADF molecule as sensitizer not only displayed better performance of lower turn-on voltage(V_(T))of 2.6 V,four-fold maxmium-external quantum efficiency(EQE_(max))of 5.3%,and lower efficiencies roll-off of 1.9%at 1000 cd m^(-2),than those of the devices without TADF sensitizer,but also exhibited intense circularly polarized electroluminescence(CPEL)with the electroluminescence dissymmetry factor(g_(EL))values of-2.3×10^(-3)and+3.0×10^(-3).Meanwhile,this study also represents the first thermally activated sensitized fluorescent CP-OLEDs with markedly enhanced efficiencies and intense CPEL.

摘要：A Si p-π-n diode with β-FeSi 2 particles embedded in the unintentionally doped Si (p--type) was designed for determining the band offset at β-FeSi 2-Si *** the diode is under forward bias,the electrons injected via the Si n-p- junction diffuse to and are confined in the β-FeSi 2 particles due to the band *** storage charge at the β-FeSi 2-Si heterojunction inversely hamper the further diffusion of electrons,giving rise to the localization of electrons in the p--Si near the Si junction,which prevents them from nonradiative recombination *** results in electroluminescence (EL) intensity from both Si and β-FeSi 2 quenching slowly up to room *** temperature dependent ratio of EL intensity of β-FeSi 2 to Si indicates the loss of electron confinement following thermal excitation *** conduction band offset between Si and β-FeSi 2 is determined to be about 0 2eV.

摘要：This paper describes the design, synthesis and characterization of a hydrogen-bonded molecular duplex with 1,8-naphthalimide fluorescent pendants. The two oligoamide molecular strands, with complementary hydrogen bond sequences of DDADAA and AADADD, can form an ultra stable self-assembly duplex. Its molecular structure was confu-med by ^1H NMR and ESI-MS, and its photoluminescence properties were determined. The resulting duplex exhibited a dramatically enhanced photoluminescence （PL） quantum efficiency of 63.7% compared to the corresponding 1,8-naphthalimide segment （32.4%）, suggesting that the formation of the duplex with larger molecular weight could successfully inhibit the quenching of the fluorescent pendant. This novel duplex is a prospective candidate for new electroluminescent emitter.

摘要：A novel designed method for tunable wavelength microcavity organic electroluminescent diode (MOLED) based on the birefringence of liquid crystal was presented. By modulated the refractive index of liquid crystal, the device could radiate with different wavelength continuously. The simulated result showed that the tunable range could reach to 60 nm and the full width of half maximum is 5.5 nm. The device could be applied to wavelength converter and tunable light source.

摘要：显示器是现代电子产品中人与机器交互的重要媒介.将显示器与纺织品相结合,已成为下一代智能可穿戴设备领域备受瞩目的方向之一.然而,从传统的刚性显示器向基于纺织品的柔性显示器过渡面临着诸多挑战,比如对显示器的纺织柔性化设计与精确集成技术的要求不断提高.这篇综述将重点概述这一领域最前沿的研究成果,主要涉及发光原理、典型材料以及结构设计的相互关联,其中纺织品和电子显示系统的无缝集成是本文的重点.此外,我们还将探索纺织品电子显示器的预期发展轨迹,并强调纱线发光器件的重要作用,以及微电子工程的集成方法和技术所带来的主要挑战.

摘要：Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication *** efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport ***,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich *** DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive ***,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge *** DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.