摘要：200mm纯晶圆代工厂华虹半导体有限公司拥有的超级结结构Super junction MOSFET（SJNFET）工艺平台累计出货量首次突破10万片,得益于市场对超级结MOSFET的强劲需求。该平台自2011年量产以来,通过与客户在设计优化、系统解决方案及市场渗透等方面的携手努力,出货量逐年递增。绿色发展是中国政府十三五规划最具特色的发展理念之一,将成为推动经济持续增长的新动力。

摘要：提出了一种具有部分超结(super junction,SJ)结构的新型SiC肖特基二极管,命名为SiC Semi-SJ-SBD结构,通过将常规SBD耐压区分为常规耐压区和超结耐压区来减小导通电阻,改善正向特性.利用二维器件模拟软件MEDICI仿真分析,研究了不同超结深度和厚度时击穿电压(VB)和比导通电阻(Ron-sp),与常规结构的SBD比较得出,半超结结构可以明显改善SiC肖特基二极管特性,并得到优化的设计方案,选择超结宽度2W为2μm,3μm,超结深度大于5μm,可以使Ron-sp降低量大于10%,而且保持VB基本不变(降低量小于4%).

摘要：基于Semi SJ(superjunction)结构,提出了SJ的比例可以从0～1渐变的PSJ(partialsuperjunction)高压器件的概念.通过对PSJ比导通电阻的分析,得到了PSJ高压器件比导通电阻优化设计的理论公式.计算了不同击穿电压的比导通电阻,并与二维器件模拟结果和实验结果相比较.讨论了BAL(bottomassistlayer)部分穿通因素η、p型区深度归一化参数r、p型区深宽比A以及PSJ漂移区掺杂浓度是否统一对PSJ高压器件比导通电阻的影响.其理论结果和器件模拟结果相吻合,为设计与优化PSJ高压器件提供了理论依据.PSJ结构特别适于制造工艺水平不高、很难实现大的p型区深宽比的情况,为现有工艺实现高压低导通电阻器件提供了一种新的思路.

摘要：Although line drawings consist of only line segments on a plane, they convey much information about the three-dimensional object structures. For a computer interpreting line drawings, some intelligent mechanism is required to extract three-dimensional information from the two-dimensional line drawings. In this paper, a new labeling theory and method are proposed for the two-dimensional line drawing with hidden-part-draw of a three-dimensional planar object with trihedral vertices. Some rules for labeling line drawing are established. There are 24 kinds of possible junctions for line drawing with hidden-part-draw, in which there are 8 possible Y and 16 W junctions. The three problems are solved that Sugihara＇s line drawing labeling technique exists. By analyzing the projections of the holes in manifold planar object, we have put forward a labeling method for the line drawing. Our labeling theory and method can discriminate between correct and incorrect hidden-part-draw natural line drawings. The hidden-part-draw natural line drawings can be labeled correctly by our labeling theory and method, whereas the labeling theory of Sugihara can only label the hidden-part-draw unnatural line drawings in which some visible lines must be drawn as hidden lines, and some invisible lines must be drawn as continuous lines.

摘要：At Physikalisch-Technische Bundesanstalt (PTB), superconducting 10 V circuits for the programmable Josephson voltage standard (PJVS) are routinely manufactured on the basis of NbxSi1-x barrier junctions. This paper describes in detail the basic design principles for an operating frequency of 70 GHz. It starts with single junctions, discusses their insertion into microstriplines and closes with the whole microwave circuit containing 69,632 NbxSi1-x barrier junctions arranged over 128 microstriplines connected in parallel. The microwave attenuation of this junction type is a key parameter for the 10 V design and we report its experimental determination. Special attention has been devoted to subarrays with just a few Josephson junctions in one of the outermost striplines. The arrangement of these subarrays determines the optimum performance of the complete 10 V series array. The high performance of programmable 10 V circuits fabricated at PTB is characterized by measured operating margins in all subarrays of more than 1 mA centered at the same dc bias current. The observed modulation of the current margins, when changing the frequency around 70 GHz, is explained by microwave reflections caused by the rf waveguide inside the cryoprobe. We determine the current margins in dependence of the output power of a microwave synthesizer and show that 60 mW is sufficient to achieve current margins larger than 1 mA.

摘要：Y2002-63196-504 0312015一种新的校正功率因数和控制镇流器的集成电路=Anew power factor correction and ballast control IC[会,英]/Ribarich,T.//2001 IEEE Industry ApplicationsConference,Vol.1 of 4.—504～509(ME)Y2002-63209-188 0312016用于闩锁效应阻抗,结式绝缘智能功率ICs的无偏压保护环=Unbiased guard ring for Iarchup-resistant,junction-isolated smart-power ICs[会,英]/Gupta,S.＆Beckman,J.//2001 IEEE Proceedings of the 2001 Bipo-lat/BiCMOS Circuits and Technology Meeting.—188～191(TE)

摘要：意法半导体（STMicroelectronics,简称ST）的最新超结（super-junction）功率MOSFET满足家电、低能源照明系统以及太阳能微逆变器厂商对电源能效的要求,同时提供更高可靠性的最新且满足高功率密度的封装。MDmesh M2系列产品拥有最新最先进的超结晶体管技术,取得了比上一代产品更低的导通电阻（RDS（ON））,以及更低的栅电荷量（QGD）和输入/输出电容（Ciss/Coss）。