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Research on single event transient pulse quenching effect in 90 nm CMOS technology
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《Science China(Technological Sciences)》2011年 第11期54卷 3064-3069页
作者:QIN JunRui CHEN ShuMing LIU BiWei CHEN JianJun LIANG Bin LIU ZhengSchool of Computer Science National University of Defense Technology Changsha 410073 China 
Since single event transient pulse quenching can reduce the set(single event transient) pulsewidths effectively,the charge collected by passive device should be maximized in order to minimize the propagated *** the pe...
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