摘要：为满足宽频带射频通信接收前端低噪声放大器的设计需求,提出一种基于共发射极密勒电容的宽带匹配结构。该结构利用异质结双极性晶体管的密勒电容,将负载纳入输入匹配网络进行设计,从而实现宽带输入匹配。该结构在实现良好的低噪声性能的同时,能够有效拓展放大器的工作频带。基于0.13μm sige bicmos工艺,设计了一款宽带低噪声放大器,电路采用三级级联结构,首级采用密勒电容宽带匹配结构,可降低噪声并实现输入宽带匹配,后两级采用共基共射结构用于补偿增益。仿真结果表明,在6~30 GHz频带内,低噪声放大器的增益为16.5~19.1 dB,噪声系数为1.43~2.66 dB,输入反射系数S11小于-11.9 dB,输出反射系数S22小于-13.7 dB。放大器在整个频段内无条件稳定。在1.8 V供电电压下电路的直流功耗为38.7 mW,整体芯片面积为0.88 mm^(2)。该低噪声放大器综合性能优良,可应用于宽带接收系统。

摘要：This paper introduces a 2.5GHz low phase-noise cross-coupled LC-VCO realized in 0.35μm sige bicmos technology. The conventional definition of a VCO operating regime is revised from a new perspective. Analysis shows the importance of inductance and bias current selection for oscillator phase noise optimization. Differences between CMOS and BJT VCO design strategy are then analyzed and the conclusions are summarized. In this implementation, bonding wires form the resonator to improve the phase noise performance. The VCO is then integrated with other components to form a PLL frequency synthesizer with a loop bandwidth of 30kHz. Measurement shows a phase noise of - 95dBc/Hz at 100kHz offset and - 116dBc/Hz at 1MHz offset from a 2.5GHz carrier. At a supply voltage of 3V, the VCO core consumes 8mA. To our knowledge,this is the first differential cross-coupled VCO in sige bicmos technology in China.

摘要：A fully integrated low noise amplifier( LNA) for WLAN 802. 11 ac is presented in this article.A cascode topology combining BJT and MOS transistor is used for better performance. An inductive source degeneration is chosen to get 50 Ohm impedance matching at the input. The noise contribution of common gate transistor is analyzed for the first time. The designed LNA is verified with IBM silicon-germanium(sige ) 0. 13μm bicmos process. The measured results show that the designed LNA has the gain of 13 dB and NF of 2. 8 dB at the center frequency of 5. 5 GHz. The input reflection S11 and output reflection S22 are equal to-19 dB and-11 dB respectively. The P-1 dB and IIP3 are-8. 9 dBm and 6. 6 dBm for the linearity performance respectively. The power consumption is only 1. 3 mW under the 1. 2 V supply. LNA achieves high gain,low noise,and high linearity performance,allowing it to be used for the WLAN 802. 11 ac applications.

摘要：基于IHP 0.13μm sige bicmos工艺,设计了一款应用于超高速光通信的四级脉冲幅度调制(PAM4)光发射机驱动电路.整体电路包括两路高速非归零码(NRZ)通道(最高有效位通道和最低有效位通道)、时钟缓冲级、电流模式逻辑(CML)加法器和输出缓冲级.鉴于PAM4信号的高线性度要求,为解决传统设计中电平失配率(RLM)较低的问题,设计了带有低压共源共栅电流镜的CML加法器,避免电流镜像不精确和输出阻抗随加法逻辑变化所带来的非线性因素.同时,针对传统输出级带宽不足与摆幅过小的问题,设计了有源电感负载的f_(t)倍频器结构,在实现同等增益下更高电路带宽的同时,突破传统输出级设计中输出摆幅与阻抗匹配之间的矛盾.后仿真结果表明,在电源电压3.3 V、输入信号为两路100 mV的25 Gb/s NRZ信号的条件下,所设计的两路高速NRZ通道可实现约18.3 dB的增益和19.65 GHz的带宽,带宽范围内等效输入噪声电压小于37.6 nV/√Hz.整体电路可实现50 Gb/s PAM4输出信号,输出眼图清晰,且获得了RLM为98.6%的高线性度,输出摆幅达1.5 V.

摘要：太赫兹技术在探测、成像及通信等领域已展现出良好的应用前景,硅基太赫兹系统因为具有低成本、小尺寸、高集成度及易于实现大规模阵列化的优点受到广泛关注。太赫兹功率放大器是硅基太赫兹系统中的重要模块,决定系统的能耗、最大辐射距离和信号质量,近年来硅基太赫兹功率放大器设计得到了长足的发展。本文将从太赫兹技术的应用场景与功率放大器在太赫兹收发系统中的地位、硅基太赫兹功率放大器的关键技术指标和设计难点、基于CMOS/CMOS SOI工艺的太赫兹功率放大器研究进展、基于sige工艺的太赫兹功率放大器研究进展四个方面对硅基太赫兹功率放大器的研究现状和技术发展趋势进行综述总结。

摘要：在0.18μm sige bicmos工艺下,设计了三种射频端口的ESD防护电路。在不影响ESD防护能力的前提下,通过串联多级二极管,可以显著提高射频电路的线性度。通过在二极管通路中串联LC谐振网络和大电感,在显著降低射频端口ESD防护电路插入损耗的同时还提高了射频电路的线性度。仿真结果表明,两级串联二极管结构可以将输入1dB压缩点提高至18.9 dBm。在16GHz频点,串联LC谐振网络设计和串联大电感设计分别可以将插入损耗减小0.5dB和0.9dB。

摘要：该文介绍了一款Ka波段(33.0 GHz^37.0 GHz)低功耗驱动放大器。此放大器使用sige bicmos工艺设计,其采用了Cascade级联结构,提高了放大器的电源电压和工作频率带宽,通过实现共射极与共基极的级间匹配,可以有效地提高放大器的增益。测试结果表明:在33.0 GHz^37.0 GHz频率范围内,放大器增益大于15.0 dB,OP-1dB为-6.0 dBm。此放大器采用5.0 V供电,工作电流为8 mA,面积为0.7 mm^2。